A diamond-based scanning probe spin sensor operating at low temperature in ultra-high vacuum

2014 ◽  
Vol 85 (1) ◽  
pp. 013701 ◽  
Author(s):  
E. Schaefer-Nolte ◽  
F. Reinhard ◽  
M. Ternes ◽  
J. Wrachtrup ◽  
K. Kern
Keyword(s):  
Low Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Probe Spin

Miniature active damping stage for scanning probe applications in ultra high vacuum

2012 ◽  
Vol 83 (3) ◽  
pp. 033701 ◽  
Author(s):  
Maximilian Assig ◽  
Andreas Koch ◽  
Wolfgang Stiepany ◽  
Carola Straßer ◽  
Alexandra Ast ◽  
...  
Keyword(s):  
High Vacuum ◽  
Active Damping ◽  
Ultra High Vacuum ◽  
Scanning Probe

An ultra high vacuum low temperature gyroscope clock

1990 ◽  
Vol 165-166 ◽  
pp. 155-156 ◽  
Author(s):  
T. Walter ◽  
J.P. Turneaure ◽  
S. Buchman ◽  
C.W.F. Everitt ◽  
G.M. Keiser
Keyword(s):  
Low Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum

Low-temperature ultra-high-vacuum scanning tunneling microscope

1992 ◽  
Vol 42-44 ◽  
pp. 1621-1626 ◽  
Author(s):  
R. Gaisch ◽  
J.K. Gimzewski ◽  
B. Reihl ◽  
R.R. Schlittler ◽  
M. Tschudy ◽  
...  
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Industrial Applications of Scanning Probe Microscopy

1998 ◽  
Vol 4 (S2) ◽  
pp. 522-523
Author(s):  
S. Magonov
Keyword(s):  
Scanning Probe Microscopy ◽  
High Vacuum ◽  
Sample Surface ◽  
Industrial Applications ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Probe Microscopy ◽  
Force Microscopy

The evolution of scanning tunneling microscopy (STM) into atomic force microscopy (AFM) have led to a family of scanning probe techniques which are widely applied in fundamental research and in industry. Visualization of the atomic- and molecular-scale structures and the possibility of modifying these structures using a sharp probe were demonstrated with the techniques on many materials. These unique capabilities initiated the further development of AFM and related methods generalized as scanning probe microscopy (SPM). The first STM experiments were performed in the clean conditions of ultra-high vacuum and on well-defined conducting or semi-conducting surfaces. These conditions restrict SPM applications to the real world that requires ambient-condition operation on the samples, many of which are insulators. AFM, which is based on the detection of forces between a tiny cantilever carrying a sharp tip and a sample surface, was introduced to satisfy these requirements. High lateral resolution and unique vertical resolution (angstrom scale) are essential AFM features.

Selective Oxidation of Ammonia on Ruthenium to Form p(2 x 2) Nitrogen Layer

2013 ◽  
Vol 6 (1) ◽  
Author(s):  
S. Balgooyen ◽  
I. Waluyo
Keyword(s):  
Low Temperature ◽  
High Vacuum ◽  
Hydrogenation Reaction ◽  
Ultra High Vacuum ◽  
Surface Chemical ◽  
Low Energy Electron Diffraction ◽  
Chemical Studies ◽  
Low Energy Electron ◽  
Temperature Programmed ◽  
Oxidation Of Ammonia

Oxidation of ammonia was used to prepare a p(2 x 2) nitrogen layer on the Ru(0001) surface as verified by temperature-programmed desorption (TPD) and low energy electron diffraction (LEED). The process takes place in an ultra-high vacuum (UHV) chamber. The surface is precovered with oxygen and then exposed to ammonia at low temperature. Upon heating, the ammonia is oxidized to form water, which desorbs at low temperature to leave a nitrogencovered surface. The resulting layer can be used in a variety of surface chemical studies, including a hydrogenation reaction, which is an important part in the study of the Haber-Bosch process, in which ruthenium is used as a catalyst.

scholarly journals Stm at High Temperature: What you see is what you see … usually

1993 ◽  
Vol 1 (5) ◽  
pp. 4-4
Author(s):  
Michael M. Kersker
Keyword(s):  
Electron Diffraction ◽  
Surface Structure ◽  
High Vacuum ◽  
High Energy ◽  
Atomic Level ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Sem Images ◽  
Optical Discs

There remains two basic axioms of all microscopists: the first….if you look, you're bound to see something, and the second….not everything you will see is artifact. These axioms apply particularly well to scanning probe microscopy at the molecular and atomic level. Fortunately, coarser resolution images share comforting similarities with images from other established scanning methods. Holes in optical discs look like holes when probed with AFM tips, and these holes look very much like SEM images, a subject with which we have some familiarity. At the molecular and atomic level, however, the scanning probe instruments may or may not be “seeing” the sample, though they are clearly seeing something.Comparison of surface structure observed with indirect surface structural measurements, for example by LEED (Low Energy Electron Diffraction) or RHEED (Reflection High Energy Electron Diffraction) usually under ultra-high vacuum conditions can lead, by inference, to an understanding of the real bulk or average surface structure.

Low Temperature In-Situ Processing for Si-MBE

1991 ◽  
Vol 220 ◽  
Author(s):  
Juergen Ramm ◽  
Eugen Beck ◽  
Albert Zueger
Keyword(s):  
Low Temperature ◽  
Hydrogen Plasma ◽  
Plasma Heating ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Native Oxide ◽  
Wafer Surface ◽  
Process Step ◽  
In Situ Processing

ABSTRACTA basic process sequence for low temperature in-situ processing of metal-insulator-semiconductor (MIS) structures in an ultra-high vacuum (UHV) multichamber system is presented. It includes conditioning of the process chamber by plasma heating, in-situ cleaning of silicon wafers, and conventional silicon molecular beam epitaxy (Si-MBE). The in-situ cleaning is achieved by an argon/hydrogen plasma treatment of the wafer surface at temperatures well below 400° C. The native oxide as well as carbon compounds are removed from the silicon surface. Etch rates for SiO2 are determined for various plasma parameters. Without additional cleaning procedures, silicon films are deposited in another process step using a quadrupole mass spectrometer controlled electron beam evaporator. Epitaxial films are obtained for substrate temperatures as low as 500°C on (100) and 600°C on (111) silicon for deposition rates of 0.05 nm/s.

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