Miniature active damping stage for scanning probe applications in ultra high vacuum

2012 ◽  
Vol 83 (3) ◽  
pp. 033701 ◽  
Author(s):  
Maximilian Assig ◽  
Andreas Koch ◽  
Wolfgang Stiepany ◽  
Carola Straßer ◽  
Alexandra Ast ◽  
...  
Keyword(s):  
High Vacuum ◽  
Active Damping ◽  
Ultra High Vacuum ◽  
Scanning Probe

Industrial Applications of Scanning Probe Microscopy

1998 ◽  
Vol 4 (S2) ◽  
pp. 522-523
Author(s):  
S. Magonov
Keyword(s):  
Scanning Probe Microscopy ◽  
High Vacuum ◽  
Sample Surface ◽  
Industrial Applications ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Probe Microscopy ◽  
Force Microscopy

The evolution of scanning tunneling microscopy (STM) into atomic force microscopy (AFM) have led to a family of scanning probe techniques which are widely applied in fundamental research and in industry. Visualization of the atomic- and molecular-scale structures and the possibility of modifying these structures using a sharp probe were demonstrated with the techniques on many materials. These unique capabilities initiated the further development of AFM and related methods generalized as scanning probe microscopy (SPM). The first STM experiments were performed in the clean conditions of ultra-high vacuum and on well-defined conducting or semi-conducting surfaces. These conditions restrict SPM applications to the real world that requires ambient-condition operation on the samples, many of which are insulators. AFM, which is based on the detection of forces between a tiny cantilever carrying a sharp tip and a sample surface, was introduced to satisfy these requirements. High lateral resolution and unique vertical resolution (angstrom scale) are essential AFM features.

A diamond-based scanning probe spin sensor operating at low temperature in ultra-high vacuum

2014 ◽  
Vol 85 (1) ◽  
pp. 013701 ◽  
Author(s):  
E. Schaefer-Nolte ◽  
F. Reinhard ◽  
M. Ternes ◽  
J. Wrachtrup ◽  
K. Kern
Keyword(s):  
Low Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Probe Spin

scholarly journals Stm at High Temperature: What you see is what you see … usually

1993 ◽  
Vol 1 (5) ◽  
pp. 4-4
Author(s):  
Michael M. Kersker
Keyword(s):  
Electron Diffraction ◽  
Surface Structure ◽  
High Vacuum ◽  
High Energy ◽  
Atomic Level ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Sem Images ◽  
Optical Discs

There remains two basic axioms of all microscopists: the first….if you look, you're bound to see something, and the second….not everything you will see is artifact. These axioms apply particularly well to scanning probe microscopy at the molecular and atomic level. Fortunately, coarser resolution images share comforting similarities with images from other established scanning methods. Holes in optical discs look like holes when probed with AFM tips, and these holes look very much like SEM images, a subject with which we have some familiarity. At the molecular and atomic level, however, the scanning probe instruments may or may not be “seeing” the sample, though they are clearly seeing something.Comparison of surface structure observed with indirect surface structural measurements, for example by LEED (Low Energy Electron Diffraction) or RHEED (Reflection High Energy Electron Diffraction) usually under ultra-high vacuum conditions can lead, by inference, to an understanding of the real bulk or average surface structure.

Investigation of Clean Ferroelectric Surface in Ultra High Vacuum (UHV): Surface Conduction and Scanning Probe Microscopy in UHV

2009 ◽  
Vol 379 (1) ◽  
pp. 157-167 ◽  
Author(s):  
Yukio Watanabe ◽  
Shigeru Kaku ◽  
Daisuke Matsumoto ◽  
Yosuke Urakami ◽  
S. W. Cheong
Keyword(s):  
Scanning Probe Microscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Surface Conduction

scholarly journals Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

2015 ◽  
Vol 6 ◽  
pp. 2485-2497 ◽  
Author(s):  
Urs Gysin ◽  
Thilo Glatzel ◽  
Thomas Schmölzer ◽  
Adolf Schöner ◽  
Sergey Reshanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electrostatic Force ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Electrostatic Force Microscopy ◽  
Kelvin Probe ◽  
Large Area ◽  
Force Microscopy ◽  
Probe Microscope

Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterization of conducting or semiconducting power devices with EFM methods requires an accurate and reliable technique from the nanometre up to the micrometre scale. For high force sensitivity it is indispensable to operate the microscope under high to ultra-high vacuum (UHV) conditions to suppress viscous damping of the sensor. Furthermore, UHV environment allows for the analysis of clean surfaces under controlled environmental conditions. Because of these requirements we built a large area scanning probe microscope operating under UHV conditions at room temperature allowing to perform various electrical measurements, such as Kelvin probe force microscopy, scanning capacitance force microscopy, scanning spreading resistance microscopy, and also electrostatic force microscopy at higher harmonics. The instrument incorporates beside a standard beam deflection detection system a closed loop scanner with a scan range of 100 μm in lateral and 25 μm in vertical direction as well as an additional fibre optics. This enables the illumination of the tip–sample interface for optically excited measurements such as local surface photo voltage detection. Results: We present Kelvin probe force microscopy (KPFM) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination.

Thin Pyrolytic Graphite Films for Electron Microscope Substrates

1971 ◽  
Vol 29 ◽  
pp. 226-227 ◽  
Author(s):  
George H. N. Riddle ◽  
Benjamin M. Siegel
Keyword(s):  
Vacuum Chamber ◽  
Pyrolytic Graphite ◽  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Graphite Substrate ◽  
Nickel Substrate ◽  
Routine Procedure ◽  
Field Electron Microscopy ◽  
Dark Field Electron

A routine procedure for growing very thin graphite substrate films has been developed. The films are grown pyrolytically in an ultra-high vacuum chamber by exposing (111) epitaxial nickel films to carbon monoxide gas. The nickel serves as a catalyst for the disproportionation of CO through the reaction 2C0 → C + CO2. The nickel catalyst is prepared by evaporation onto artificial mica at 400°C and annealing for 1/2 hour at 600°C in vacuum. Exposure of the annealed nickel to 1 torr CO for 3 hours at 500°C results in the growth of very thin continuous graphite films. The graphite is stripped from its nickel substrate in acid and mounted on holey formvar support films for use as specimen substrates.The graphite films, self-supporting over formvar holes up to five microns in diameter, have been studied by bright and dark field electron microscopy, by electron diffraction, and have been shadowed to reveal their topography and thickness. The films consist of individual crystallites typically a micron across with their basal planes parallel to the surface but oriented in different, apparently random directions about the normal to the basal plane.

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