Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate

2013 ◽  
Vol 114 (23) ◽  
pp. 233103 ◽  
Author(s):  
Shih-Wei Feng ◽  
Yu-Yu Chen ◽  
Chih-Ming Lai ◽  
Li-Wei Tu ◽  
Jung Han
Keyword(s):  
Sapphire Substrate ◽  
Strain Relaxation ◽  
Degree Of Polarization ◽  
Anisotropic Strain ◽  
Step Growth

Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates

2004 ◽  
Vol 224 (1-4) ◽  
pp. 104-107 ◽  
Author(s):  
T Egawa ◽  
A Sakai ◽  
T Yamamoto ◽  
N Taoka ◽  
O Nakatsuka ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Step Growth

Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates

2017 ◽  
Vol 110 (19) ◽  
pp. 192104 ◽  
Author(s):  
Yuxia Feng ◽  
Xuelin Yang ◽  
Jianpeng Cheng ◽  
Jie Zhang ◽  
Panfeng Ji ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
High Quality ◽  
Anisotropic Strain

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

CrystEngComm ◽  
2015 ◽  
Vol 17 (24) ◽  
pp. 4469-4474 ◽  
Author(s):  
J. Z. Li ◽  
Z. Z. Chen ◽  
Q. Q. Jiao ◽  
Y. L. Feng ◽  
S. Jiang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Crystalline Quality ◽  
High Crystalline Quality ◽  
Patterned Sapphire Substrate ◽  
Specular Surface

The silane-controlled 3D growth led to a high crystalline quality, much strain relaxation and a specular surface for the GaN epilayers on NPSS.

Anisotropic strain relaxation in GaAs layers grown on Si(100) substrates by post‐growth patterning

1992 ◽  
Vol 61 (7) ◽  
pp. 810-812 ◽  
Author(s):  
Nobuo Tsukamoto ◽  
Yoshiaki Yazawa ◽  
Junko Asano ◽  
Tetsuroh Minemura
Keyword(s):  
Strain Relaxation ◽  
Anisotropic Strain
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