Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates

2017 ◽  
Vol 110 (19) ◽  
pp. 192104 ◽  
Author(s):  
Yuxia Feng ◽  
Xuelin Yang ◽  
Jianpeng Cheng ◽  
Jie Zhang ◽  
Panfeng Ji ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
High Quality ◽  
Anisotropic Strain

Very Thick Coherently Strained GexSi1−x Layers Grown in a Narrow Temperature Window

1991 ◽  
Vol 220 ◽  
Author(s):  
C. H. Chern ◽  
K. L. Wang ◽  
G. Bai ◽  
M. -A. Nicolet
Keyword(s):  
Growth Temperature ◽  
Strain Relaxation ◽  
Gas Pressure ◽  
High Density ◽  
Misfit Dislocations ◽  
High Quality ◽  
Strained Layers ◽  
Temperature Window ◽  
Residual Gas

ABSTRACTStrain relaxation of GexSi1−x layers is studied as a function of growth temperature. Extremely thick coherently strained layers whose thicknesses exceed more than fifty times of the critical thicknesses predicted by Matthews and Blakeslee's model were successfully grown by MBE. There exits a narrow temperature window from 310 °C to 350 °C for growing this kind of high quality thick strained layers. Below this temperature window, the layers are poor in quality as indicated from RHEED patterns. Above this window, the strain of the layers relaxes very fast accompanied with a high density of misfit dislocations as the growth temperature increases. Moreover, for samples grown in this temperature window, the strain relaxation shows a dependence of the residual gas pressure, which has never been reported before.

Anisotropic strain relaxation in GaAs layers grown on Si(100) substrates by post‐growth patterning

1992 ◽  
Vol 61 (7) ◽  
pp. 810-812 ◽  
Author(s):  
Nobuo Tsukamoto ◽  
Yoshiaki Yazawa ◽  
Junko Asano ◽  
Tetsuroh Minemura
Keyword(s):  
Strain Relaxation ◽  
Anisotropic Strain

Interface structure and anisotropic strain relaxation of nonpolar wurtzite (1120) and (1010) orientations: ZnO epilayers grown on sapphire

2008 ◽  
Vol 104 (7) ◽  
pp. 073535 ◽  
Author(s):  
J.-M. Chauveau ◽  
P. Vennéguès ◽  
M. Laügt ◽  
C. Deparis ◽  
J. Zuniga-Perez ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Interface Structure ◽  
Anisotropic Strain
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