Temperature dependent junction capacitance-voltage characteristics of Ni embedded TiN/SiO2/p-Si metal–insulator–semiconductor structure

2013 ◽  
Vol 114 (22) ◽  
pp. 224508 ◽  
Author(s):  
J. Panda ◽  
S. Chattopadhyay ◽  
T. K. Nath
Keyword(s):  
Semiconductor Structure ◽  
Temperature Dependent ◽  
Metal Insulator ◽  
Junction Capacitance ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type

IMPLEMENTATION OF THE TWO-FREQUENCY METHOD FOR MEASURING THE DERIVATIVE OF CAPACITANCE-VOLTAGE CHARACTERISTIC

2021 ◽  
pp. 44-51
Author(s):  
N. I. Lysenko ◽  
V. G. Polovinkin
Keyword(s):  
Numerical Differentiation ◽  
Voltage Characteristic ◽  
Semiconductor Structure ◽  
Measuring System ◽  
Frequency Method ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
Silicon Based ◽  
Derivatives Of

The article presents an example of the implementation of the two-frequency method for measuring the derivative of the capacitance-voltage characteristic. The authors describe the diagram of the measuring system and the software package for the measurement process control. The article also gives the results of measurements of the capacitance-voltage characteristic and its derivative of the silicon-based metal-insulator-semiconductor structure. The qualitative differences between the derivatives of the capacitive characteristics of the metal-insulator-semiconductor structure were obtained as a result of numerical differentiation and its direct measurement by the two-frequency method. The authors offer an explanation for this difference.

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