Improving the quality factor of polycrystalline Si thin-film micromechanical resonators by metal-induced lateral crystallization using biomineralized Ni nanoparticles

2013 ◽  
Vol 103 (22) ◽  
pp. 223103 ◽  
Author(s):  
Shinya Kumagai ◽  
Takashi Tomikawa ◽  
Shohei Ogawa ◽  
Ichiro Yamashita ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Quality Factor ◽  
Ni Nanoparticles ◽  
Micromechanical Resonators ◽  
Lateral Crystallization ◽  
Si Thin Film

Nickel Metal Induced Lateral Crystallization of Patterned Amorphous Silicon Thin Film

2007 ◽  
Vol 561-565 ◽  
pp. 1149-1152 ◽  
Author(s):  
Gou Nakagawa ◽  
Tanemasa Asano
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Wide Area ◽  
Competitive Growth ◽  
Silicon Thin Film ◽  
Nickel Metal ◽  
Growth Area ◽  
Lateral Crystallization ◽  
Si Thin Film ◽  
Pattern Width

Metal-induced lateral crystallization (MILC) of patterned amorphous silicon(a-Si) thin film using Ni as a catalyst has been investigated. Ni-MILC grains are based on the growth of needle-like crystals due to the migration of NiSi2 precipitates, which located at the crystalline front, along the <111> directions. In the case where the needle-like crystallites collided at the a-Si pattern edge, not only “turn” or “branch” of the needle-like crystallites toward one of the possible <111> directions but also the growth along the pattern edge were observed. By limiting the growth area, the competitive growth of dendrite crystals that originated in needle-like crystallites was found to appear. This phenomenon resulted in the orientation alignment of MILC crystals in a wide area. Besides, the grain-filtering of MILC crystals was found to be possible by narrowing the pattern width.

Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization

2016 ◽  
Vol 122 (6) ◽  
Author(s):  
Sol Kyu Lee ◽  
Ki Hwan Seok ◽  
Jae Hyo Park ◽  
Hyung Yoon Kim ◽  
Hee Jae Chae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Nickel Silicide ◽  
Lateral Crystallization ◽  
Channel Bottom ◽  
Si Thin Film ◽  
Bottom Gate

Electrical Stress Effect on Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization

1997 ◽  
Vol 36 (Part 1, No. 8) ◽  
pp. 5029-5032 ◽  
Author(s):  
Tae-Hyung Ihn ◽  
Byung-Il Lee ◽  
Seung-Ki Joo ◽  
Yoo-Chan Jeon
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stress Effect ◽  
Electrical Stress ◽  
Lateral Crystallization ◽  
Si Thin Film
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