Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties

2013 ◽  
Vol 103 (22) ◽  
pp. 223107 ◽  
Author(s):  
R. S. Chen ◽  
W. C. Wang ◽  
C. H. Chan ◽  
M. L. Lu ◽  
Y. F. Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Nanowires ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

Nanoscale ◽  
2013 ◽  
Vol 5 (15) ◽  
pp. 6867 ◽  
Author(s):  
R. S. Chen ◽  
W. C. Wang ◽  
M. L. Lu ◽  
Y. F. Chen ◽  
H. C. Lin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Efficiency ◽  
Semiconductor Nanowires ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Power Dependence

Synthesis of hybrid polymethacrylate–noble metal (M = Au, Pd) nanoparticles for the growth of metal-oxide semiconductor nanowires

RSC Advances ◽  
2012 ◽  
Vol 2 (10) ◽  
pp. 4370 ◽  
Author(s):  
M. Zervos ◽  
M. Demetriou ◽  
T. Krasia-Christoforou ◽  
A. Othonos ◽  
R. P. Turcu
Keyword(s):  
Metal Oxide ◽  
Noble Metal ◽  
Pd Nanoparticles ◽  
Semiconductor Nanowires ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Suppression of Timing Variations due to Random Dopant Fluctuation by Back-Gate Bias in a Nanometer CMOS Inverter

2020 ◽  
Vol 13 ◽  
Author(s):  
Kai Zhang ◽  
Weifeng Lü ◽  
Peng Si ◽  
Zhifeng Zhao ◽  
Tianyu Yu
Keyword(s):  
Monte Carlo ◽  
Integrated Circuits ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Bias ◽  
Cmos Inverter ◽  
Back Gate ◽  
Random Dopant Fluctuation ◽  
Random Dopant

Background: In state-of-the-art nanometer metal-oxide-semiconductor-field-effect- transistors (MOSFETs), optimization of timing characteristic is one of the major concerns in the design of modern digital integrated circuits. Objective: This study proposes an effective back-gate-biasing technique to comprehensively investigate the timing and its variation due to random dopant fluctuation (RDF) employing Monte Carlo methodology. Methods: To analyze RDF-induced timing variation in a 22-nm complementary metal-oxide semiconductor (CMOS) inverter, an ensemble of 1000 different samples of channel-doping for negative metal-oxide semiconductor (NMOS) and positive metal-oxide semiconductor (PMOS) was reproduced and the input/output curves were measured. Since back-gate bias is technology dependent, we present in parallel results with and without VBG. Results: It is found that the suppression of RDF-induced timing variations can be achieved by appropriately adopting back-gate voltage (VBG) through measurements and detailed Monte Carlo simulations. Consequently, the timing parameters and their variations are reduced and, moreover, that they are also insensitive to channel doping with back-gate bias. Conclusion: Circuit designers can appropriately use back-gate bias to minimize timing variations and improve the performance of CMOS integrated circuits.

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