Synthesis of hybrid polymethacrylate–noble metal (M = Au, Pd) nanoparticles for the growth of metal-oxide semiconductor nanowires

RSC Advances ◽  
2012 ◽  
Vol 2 (10) ◽  
pp. 4370 ◽  
Author(s):  
M. Zervos ◽  
M. Demetriou ◽  
T. Krasia-Christoforou ◽  
A. Othonos ◽  
R. P. Turcu
Keyword(s):  
Metal Oxide ◽  
Noble Metal ◽  
Pd Nanoparticles ◽  
Semiconductor Nanowires ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

Nanoscale ◽  
2013 ◽  
Vol 5 (15) ◽  
pp. 6867 ◽  
Author(s):  
R. S. Chen ◽  
W. C. Wang ◽  
M. L. Lu ◽  
Y. F. Chen ◽  
H. C. Lin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Efficiency ◽  
Semiconductor Nanowires ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Power Dependence

Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties

2013 ◽  
Vol 103 (22) ◽  
pp. 223107 ◽  
Author(s):  
R. S. Chen ◽  
W. C. Wang ◽  
C. H. Chan ◽  
M. L. Lu ◽  
Y. F. Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Nanowires ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Hydrogen sensors based on noble metal doped metal-oxide semiconductor: A review

2017 ◽  
Vol 42 (31) ◽  
pp. 20386-20397 ◽  
Author(s):  
Yifan Luo ◽  
Chao Zhang ◽  
Bingbing Zheng ◽  
Xin Geng ◽  
Marc Debliquy
Keyword(s):  
Metal Oxide ◽  
Noble Metal ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Hydrogen Sensors ◽  
Metal Doped

Comparison of Fast Response and Recovery Pd Nanoparticles and Ni Thin Film Hydrogen Gas Sensors Based on Metal-Oxide-Semiconductor Structure

NANO ◽  
2017 ◽  
Vol 12 (08) ◽  
pp. 1750096 ◽  
Author(s):  
G. Behzadi Pour ◽  
L. Fekri Aval
Keyword(s):  
Steady State ◽  
Metal Oxide ◽  
Gas Sensors ◽  
Pd Nanoparticles ◽  
Metal Oxide Semiconductor ◽  
Hydrogen Gas ◽  
Oxide Semiconductor ◽  
Oxide Surface ◽  
Time Interval ◽  
Hydrogen Gas Sensors

In this study, two hydrogen sensors with Pd/SiO2/Si and Ni/SiO2/Si structures have been fabricated. Palladium nanoparticles are synthesized and then deposited on the oxide surface using spin coating. Capacitance–voltage curves for the Pd/SiO2/Si sensor at room temperature and for the Ni/SiO2/Si sensor at 140[Formula: see text]C in pure nitrogen and 1% H2–N2 mixture are described. The time required for reaching 90% of the steady-state signal magnitude ([Formula: see text]) for Pd/SiO2/Si capacitor was 1.4[Formula: see text]s and for Ni/SiO2/Si capacitor was 90 s. The time interval for recovery from 90% to 10% of steady-state signal magnitude ([Formula: see text] for Pd/SiO2/Si capacitor was 14[Formula: see text]s and for Ni/SiO2/Si capacitor was 40[Formula: see text]min. For the Pd/SiO2/Si capacitor, the response is 88% and for Ni/SiO2/Si capacitor the response is 29%. Comparison of Pd nanoparticles capacitive- and resistance-based sensors shows that the metal-oxide-semiconductor capacitive is faster and more sensitive than the resistance-based hydrogen gas sensors.

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