Broadband Absorptance High Efficiency Silicon Nanowire Fractal Arrays for Photovoltaic Applications

2014 ◽  
Vol 1707 ◽  
Author(s):  
Omar H. Alzoubi ◽  
Husam Abu-Safe ◽  
Khalid Alshurman ◽  
Hameed A. Naseem
Keyword(s):  
High Efficiency ◽  
Crystalline Silicon ◽  
Light Trapping ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Normal Incidence ◽  
Hexagonal Array ◽  
Equivalent Thickness ◽  
Array Structure ◽  
Photovoltaic Solar Cells

ABSTRACTNanowire arrays have been proposed to enhance light trapping, increase efficiencies, and reduced material cost in photovoltaic solar cells. In this work we present a new crystalline silicon nanowire array structure, inspired by fractal geometry. The array structure is assumed to be an infinite 2D array in the x and y directions, and composed of vertically aligned SiNW suspended in air. Hexagonal fractal-like geometry is adapted in arranging cylindrical SiNW in these arrays. Full-wave finite element method 3D simulation is used to compute reflectance, transmittance and absorptance of the array for a normal incidence plane wave. The proposed fractal-like distribution of SiNW arrays yield broad absorption spectrum and enhanced efficiency while using less material. The efficiency of the proposed fractal-like SiNW arrays achieve ∼100% enhancement over that of the equivalent thickness flat c-Si film, and ∼18% enhancement over an equivalent height hexagonal array. The proposed optimized structures achieved a filling ratio ∼25%, which is ∼33% less than the corresponding hexagonal array.

Single-Crystalline Silicon Nanowire Array-Based Photoelectrochemical Cells

2009 ◽  
Vol 156 (5) ◽  
pp. K77 ◽  
Author(s):  
Enrique A. Dalchiele ◽  
Francisco Martín ◽  
Dietmar Leinen ◽  
Ricardo E. Marotti ◽  
José Ramón Ramos-Barrado
Keyword(s):  
Crystalline Silicon ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Photoelectrochemical Cells ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Silicon Nanowire Array

scholarly journals Design of Silicon Nanowire Array for PEDOT:PSS-Silicon Nanowire-Based Hybrid Solar Cell

Energies ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3797 ◽  
Author(s):  
Syed Abdul Moiz ◽  
A. N. M. Alahmadi ◽  
Abdulah Jeza Aljohani
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Short Circuit ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Hybrid Solar Cell ◽  
Design Issues ◽  
Sinw Array

Among various photovoltaic devices, the poly 3, 4-ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS) and silicon nanowire (SiNW)-based hybrid solar cell is getting momentum for the next generation solar cell. Although, the power-conversion efficiency of the PEDOT:PSS–SiNW hybrid solar cell has already been reported above 13% by many researchers, it is still at a primitive stage and requires comprehensive research and developments. When SiNWs interact with conjugate polymer PEDOT:PSS, the various aspects of SiNW array are required to optimize for high efficiency hybrid solar cell. Therefore, the designing of silicon nanowire (SiNW) array is a crucial aspect for an efficient PEDOT:PSS–SiNW hybrid solar cell, where PEDOT:PSS plays a role as a conductor with an transparent optical window just-like as metal-semiconductor Schottky solar cell. This short review mainly focuses on the current research trends for the general, electrical, optical and photovoltaic design issues associated with SiNW array for PEDOT:PSS–SiNW hybrid solar cells. The foremost features including the morphology, surface traps, doping of SiNW, which limit the efficiency of the PEDOT:PSS–SiNW hybrid solar cell, will be addressed and reviewed. Finally, the SiNW design issues for boosting up the fill-factor, short-circuit current and open-circuit voltage will be highlighted and discussed.

Development of performance- and cost-oriented HD PDP TV with high picture quality using a high-efficiency hexagonal array structure

2004 ◽  
Vol 12 (3) ◽  
pp. 251 ◽  
Author(s):  
Min-Sun Yoo ◽  
Jeong-Nam Kim ◽  
Dong-Ju Woo ◽  
Sang-Hoon Yim ◽  
Yoon-Hyoung Cho
Keyword(s):  
High Efficiency ◽  
Picture Quality ◽  
Hexagonal Array ◽  
Array Structure

scholarly journals Absorption-Enhanced Ultra-Thin Solar Cells Based on Horizontally Aligned p–i–n Nanowire Arrays

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1111 ◽  
Author(s):  
Xueguang Yuan ◽  
Xiaoyu Chen ◽  
Xin Yan ◽  
Wei Wei ◽  
Yangan Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Solar Cells ◽  
High Efficiency ◽  
Light Trapping ◽  
Nanowire Array ◽  
Three Dimensional ◽  
Absorption Enhancement ◽  
High Efficiency Solar Cells ◽  
Maximum Conversion Efficiency

A horizontally aligned GaAs p–i–n nanowire array solar cell is proposed and studied via coupled three-dimensional optoelectronic simulations. Benefiting from light-concentrating and light-trapping properties, the horizontal nanowire array yields a remarkable efficiency of 10.8% with a radius of 90 nm and a period of 5 radius, more than twice that of its thin-film counterpart with the same thickness. To further enhance the absorption, the nanowire array is placed on a low-refractive-index MgF2 substrate and capsulated in SiO2, which enables multiple reflection and reabsorption of light due to the refractive index difference between air/SiO2 and SiO2/MgF2. The absorption-enhancement structure increases the absorption over a broad wavelength range, resulting in a maximum conversion efficiency of 18%, 3.7 times higher than that of the thin-film counterpart, which is 3 times larger in GaAs material volume. This work may pave the way for the development of ultra-thin high-efficiency solar cells with very low material cost.

Silicon Nanowire Solar Cells With Radial p-n Heterojunction on Crystalline Silicon Thin Films: Light Trapping Properties

2014 ◽  
Vol 4 (1) ◽  
pp. 28-32 ◽  
Author(s):  
Guobin Jia ◽  
Annett Gawlik ◽  
Joachim Bergmann ◽  
Bjorn Eisenhawer ◽  
Sven Schonherr ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Crystalline Silicon ◽  
Light Trapping ◽  
Silicon Nanowire ◽  
Silicon Thin Films

A Systematic Study of Metal-assisted Chemical Etching Parameters for Well-Ordered Silicon Nanowire Array Fabrication

2012 ◽  
Vol 1408 ◽  
Author(s):  
Arif S. Alagoz ◽  
Tansel Karabacak
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Crystalline Silicon ◽  
Silicon Nanowire ◽  
Etching Rate ◽  
Nanowire Array ◽  
Lithium Ion ◽  
Nanowire Diameter ◽  
Silicon Nanowire Array ◽  
Metal Assisted Chemical Etching

ABSTRACTMetal-assisted chemical etching is a simple and low-cost silicon nanowire fabrication method which allows control of nanowire diameter, length, shape and orientation. In this work, we fabricated well-ordered silicon nanowire array by patterning gold thin film by nanosphere lithography and etching single crystalline silicon wafer by metal-assisted chemical etching technique. We investigated relation between etched solution concentration and nanowire morphology, wafer crystal orientation, etching rate. This well-ordered silicon nanowires arrays have the potential applications in many fields but especially next generation energy related applications from solar cells to lithium-ion batteries.

Ray Tracing of Light Trapping Schemes in Thin Crystalline Silicon for Photovoltaics

2020 ◽  
Vol 301 ◽  
pp. 183-191 ◽  
Author(s):  
Mohd Zamir Pakhuruddin
Keyword(s):  
Ray Tracing ◽  
Light Absorption ◽  
Crystalline Silicon ◽  
Light Trapping ◽  
Solar Spectrum ◽  
Wavelength Region ◽  
Normal Incidence ◽  
Photocurrent Density ◽  
Back Surface ◽  
Reflective Coating

Thin crystalline silicon (c-Si) suffers from poor light absorption which hinders generation of high photocurrent in photovoltaic (PV) devices. To overcome this issue, efficient light trapping (LT) schemes need to be incorporated into the thin c-Si absorber. This paper presents ray tracing of LT schemes in thin c-Si to enhance broadband light absorption within 300-1200 nm wavelength region. For the ray tracing, mono c-Si wafer with 100 μm thickness is investigated and solar spectrum (AM1.5G) at normal incidence is used. Front and rear pyramid textures, silicon nitride (SiNx) anti-reflective coating (ARC) and back surface reflector (BSR) are the LT schemes being studied in this work. With incremental LT schemes, optical properties of the thin c-Si are analyzed. From the absorption curve, maximum potential photocurrent density (Jmax) is calculated, assuming unity carrier collection. The c-Si reference (without LT) exhibits Jmax of 24.93 mA/cm2. With incorporation of incremental LT schemes into the thin c-Si, the Jmax increases, owing to enhanced light coupling and light scattering in the c-Si absorber. The Jmax up to 42.12 mA/cm2 is achieved when all the LT schemes are incorporated into the thin c-Si absorber. This represents 69% enhancement when compared to the Jmax of the c-Si reference.

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