GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

2013 ◽  
Vol 103 (20) ◽  
pp. 201112 ◽  
Author(s):  
David S. Meyaard ◽  
Guan-Bo Lin ◽  
Ming Ma ◽  
Jaehee Cho ◽  
E. Fred Schubert ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Type Region ◽  
Light Emitting ◽  
Electron Leakage ◽  
P Type

scholarly journals Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 334
Author(s):  
Barsha Jain ◽  
Ravi Teja Velpula ◽  
Moulik Patel ◽  
Sharif Md. Sadaf ◽  
Hieu Pham Trung Nguyen
Keyword(s):  
Active Region ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electron Leakage ◽  
Deep Ultraviolet

To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-rich p-type AlxGa(1−x)N electron blocking layer (EBL) has been utilized. However, the conventional EBL can mitigate the electron overflow only up to some extent and adversely, holes are depleted in the EBL due to the formation of positive sheet polarization charges at the heterointerface of the last quantum barrier (QB)/EBL. Subsequently, the hole injection efficiency of the LED is severely limited. In this regard, we propose an EBL-free AlGaN deep UV LED structure using graded staircase quantum barriers (GSQBs) instead of conventional QBs without affecting the hole injection efficiency. The reported structure exhibits significantly reduced thermal velocity and mean free path of electrons in the active region, thus greatly confines the electrons over there and tremendously decreases the electron leakage into the p-region. Moreover, such specially designed QBs reduce the quantum-confined Stark effect in the active region, thereby improves the electron and hole wavefunctions overlap. As a result, both the internal quantum efficiency and output power of the GSQB structure are ~2.13 times higher than the conventional structure at 60 mA. Importantly, our proposed structure exhibits only ~20.68% efficiency droop during 0–60 mA injection current, which is significantly lower compared to the regular structure.

scholarly journals Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer

2013 ◽  
Vol 21 (10) ◽  
pp. 11698 ◽  
Author(s):  
Yong-Seok Choi ◽  
Jang-Won Kang ◽  
Byeong-Hyeok Kim ◽  
Dong-Keun Na ◽  
Sang-Jun Lee ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
P Type

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

2010 ◽  
Vol 97 (26) ◽  
pp. 261103 ◽  
Author(s):  
C. H. Wang ◽  
C. C. Ke ◽  
C. Y. Lee ◽  
S. P. Chang ◽  
W. T. Chang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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