scholarly journals Nucleation and growth of HfO2 layers on graphene by chemical vapor deposition

2013 ◽  
Vol 103 (18) ◽  
pp. 183116 ◽  
Author(s):  
Grzegorz Lupina ◽  
Mindaugas Lukosius ◽  
Julia Kitzmann ◽  
Jarek Dabrowski ◽  
Andre Wolff ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation And Growth

Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weihua Wang ◽  
Bing Dai ◽  
Guoyang Shu ◽  
Yang Wang ◽  
Benjian Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Bias Voltage ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
High Density ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition

Diamond nucleation on iridium (001) substrates was investigated under different bias conditions. High-density epitaxial nucleation can be obtained in a narrow bias window. This paper reports both the typical nucleation...

Modeling of Silicon Nanodots Nucleation and Growth Deposited by LPCVD on SiO2 : From Molecule/surface Interactions to Reactor Scale Simulations

2006 ◽  
Vol 959 ◽  
Author(s):  
Ilyes Zahi ◽  
Hugues Vergnes ◽  
Brigitte Caussat ◽  
Alain Esteve ◽  
Mehdi Djafari Rouhani ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Time ◽  
Chemical Vapor ◽  
Surface Interactions ◽  
Nucleation And Growth ◽  
High Dilution ◽  
First Results ◽  
Pressure Chemical ◽  
Molecule Surface

ABSTRACTWe present first results combining models at continuum and atomistic (DFT) levels to improve understanding of key mechanisms involved in silicon nanodots (NDs) synthesis on SiO2 by Low Pressure Chemical Vapor Deposition (LPCVD) from silane SiH4. In particular, by simulating an industrial LPCVD reactor using the CFD code Fluent, we find that the deposition time could be increased and then the reproducibility and uniformity of NDs deposition could be improved when highly diluting silane in a carrier gas. A consequence of this high dilution seems to be that the contribution to deposition of unsaturated species such as silylene SiH2 highly increases. This result is important since our first DFT calculations have shown that silicon chemisorption on silanol Si-OH or siloxane Si-O-Si bonds present on SiO2 substrates could only proceed from silylene (and probably from other unsaturated species). The silane saturated molecule could only contribute to NDs growth, i.e. silicon chemisorption on already deposited silicon bonds. Increasing silylene contribution to deposition in highly diluting silane could then also exalt silicon nucleation on SiO2 substrates and then increase NDs density.

Nucleation and Growth of Quasicrystalline Silicon Thin Films on Glass Substrate Synthesized by Ceramics Hot Wire Chemical Vapor Deposition

2006 ◽  
Vol 910 ◽  
Author(s):  
Abdul Rafik Middya ◽  
Jian-Jun Liang ◽  
Kartik Ghosh
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Glass Substrate ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
Novel Structure ◽  
Hot Filament

AbstractIn this work, we report on nucleation and growth of silicon thin films on glass substrate with “five-fold” symmetry and “six-fold” symmetry by ceramics hot wire chemical vapor deposition. We observed “confinement of heat and photon” is a powerful approach in developing silicon thin films with novel structure, i.e. quasicrystalline silicon thin films on glass substrate. We found unambiguously that photons emitted from the hot filament influence the nucleation of nanocrystal silicon that produces new type of silicon thin films with “five-fold” symmetry and “six-fold” symmetry.

A Study of Nucleation and Growth in MOCVD: The Growth of Thin Films of Alumina

2000 ◽  
Vol 648 ◽  
Author(s):  
M.P. Singh ◽  
S. Mukhopadhayay ◽  
Anjana Devi ◽  
S.A. Shivashankar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Film Growth ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Cross Sectional ◽  
Alumina Films ◽  
Pressure Chemical

AbstractWe have studied the nucleation and growth of alumina by metalorganic chemical vapor deposition (MOCVD). The deposition of alumina films was carried out on Si(100) in a horizontal, hot-wall, low pressure chemical vapor deposition (CVD) reactor, using aluminum acetylacetonate{Al(acac)3}as the CVD precursor. We have investigated growth of alumina films as a function of different CVD parameters such as substrate temperature and total reactor pressure during film growth. Films were characterized by optical microscopy, X-ray diffractometry (XRD), scanning electron microscopy (SEM), cross-sectional SEM, and secondary ion mass spectrometry (SIMS) compositional depth profiling. The chemical analysis reveals that the carbon is present throughout the depth of the films.

Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition

2009 ◽  
Vol 21 (12) ◽  
pp. 2386-2396 ◽  
Author(s):  
Byung Joon Choi ◽  
Seol Choi ◽  
Taeyong Eom ◽  
Seung Wook Ryu ◽  
Deok-Yong Cho ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Nucleation And Growth

Nucleation and growth kinetics in semiconductor chemical vapor deposition

2001 ◽  
Vol 63 (4) ◽  
Author(s):  
J. Spitzmüller ◽  
M. Fehrenbacher ◽  
H. Rauscher ◽  
R. J. Behm
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation And Growth

Nucleation and growth of oriented diamond on Si(100) by bias-assisted chemical vapor deposition

1997 ◽  
Vol 12 (5) ◽  
pp. 1351-1355 ◽  
Author(s):  
Mikka Nishitani-Gamo ◽  
Toshihiro Ando ◽  
Kazuo Yamamoto ◽  
Paul A. Dennig ◽  
Yoichiro Sato
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Nucleation Density ◽  
Subsequent Growth ◽  
Oriented Growth ◽  
Oriented Films ◽  
Morphology Changes

In order to clarify the effect of bias treatments on the highly oriented growth of diamond, we investigated the relation between the silicon surface morphology changes after applying a bias voltage, and the orientation of the diamond crystallites after growth. We report two major findings. First, a textured structure on the Si surface after the bias pretreatment was found to be a necessary but insufficient indicator for the subsequent growth of highly oriented diamond. Second, although bias pretreatments effectively enhance nucleation, we did not find a clear relationship between the nucleation density and the percentage of oriented crystallites. The highest nucleation densities resulted in randomly oriented films. We conclude that bias pretreatments affect the nucleation enhancement and the diamond orientation through different mechanisms.

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