Large diameter permanent-magnets-expanded plasma source for spontaneous generation of low-energy ion beam

2014 ◽  
Vol 85 (2) ◽  
pp. 02C101 ◽  
Author(s):  
Kazunori Takahashi ◽  
Tatsuya Suzuki ◽  
Akira Ando
Keyword(s):  
Permanent Magnets ◽  
Ion Beam ◽  
Large Diameter ◽  
Plasma Source ◽  
Low Energy ◽  
Spontaneous Generation

scholarly journals Effect of permanent magnets on plasma confinement and ion beam properties in a double layer helicon plasma source

2019 ◽  
Vol 85 (3) ◽  
Author(s):  
Erik Varberg ◽  
Åshild Fredriksen
Keyword(s):  
Magnetic Field ◽  
Permanent Magnets ◽  
Ion Beam ◽  
Plasma Source ◽  
Diffusion Chamber ◽  
Plasma Potential ◽  
Field Energy ◽  
Plasma Confinement ◽  
Plasma Device ◽  
Field Lines

The work described in this article was carried out to investigate how permanent magnets (PM) affect the plasma confinement and ion beam properties in an inductively coupled plasma which expands from a helicon source. The cylindrical plasma device Njord has a 13 cm long and 20 cm wide stainless steel port connecting the source chamber and the diffusion chamber. The source chamber has an axial magnetic field produced by two coils, with magnetic field lines expanding into the diffusion chamber. Simulations have shown that the field lines leaving the edge of the source hit the port wall, causing a loss of electrons in this section. In the experiments performed in this work, PMs were added around the port walls near the exit of a plasma source and the effect was investigated experimentally by means of a retarding field energy analyser probe. The plasma potential, ion density and ion beam parameters were estimated, and the results with and without the PMs were compared. The results showed that the plasma density in the centre can in some cases be doubled, and the density at the edges of the plasma increased significantly with PMs in place. Although the plasma potential was slightly affected, and the beam velocity dropped by ${\sim}$ 10 %, the ion beam flux increased by a factor of 1.5.

scholarly journals A concept of plasma source for producing an impurity-free, low-energy ion beam by using a string-plasma.

1990 ◽  
Vol 2 (3) ◽  
pp. 194-197
Author(s):  
S. Harakawa ◽  
T. Noguchi ◽  
T. Tanikawa ◽  
K. Takayama
Keyword(s):  
Ion Beam ◽  
Plasma Source ◽  
Low Energy

Development of a 13-cm-Diameter Permanent-Magnets-Expanding Plasma Source Providing a Supersonic Ion Beam

2011 ◽  
Vol 39 (11) ◽  
pp. 2440-2441 ◽  
Author(s):  
Yuki Itoh ◽  
Kazunori Takahashi ◽  
Tamiya Fujiwara
Keyword(s):  
Permanent Magnets ◽  
Ion Beam ◽  
Plasma Source

scholarly journals Low energy ion beam transport by permanent magnets

1980 ◽  
Vol 51 (4) ◽  
pp. 500-503 ◽  
Author(s):  
K. W. Ehlers ◽  
K. N. Leung
Keyword(s):  
Permanent Magnets ◽  
Ion Beam ◽  
Low Energy ◽  
Beam Transport

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

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