scholarly journals Transport of low energy positive and negative ion beam by permanent magnets

1980 ◽  
Author(s):  
K.N. Leung ◽  
K.W. Ehlers ◽  
E.B. Jr. Hooper
Keyword(s):  
Permanent Magnets ◽  
Ion Beam ◽  
Low Energy ◽  
Negative Ion

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation

2008 ◽  
Vol 1066 ◽  
Author(s):  
Prakash R. Poudel ◽  
K. Hossain ◽  
J. Li ◽  
B. Gorman ◽  
A. Neogi ◽  
...  
Keyword(s):  
Light Emission ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Ion Source ◽  
Alpha Particles ◽  
Low Energy ◽  
Negative Ion ◽  
Tandem Accelerator ◽  
Cross Sectional ◽  
Osmium Silicide

ABSTRACTLow energy (55 KeV) Osmium ( Os− ) negative ion beam was used to implant (5×1016 atoms/cm2 ) into p-type-Si (100). The implantation was performed with the ion source of a National Electrostatic Corp. 3 MV Tandem accelerator. The implanted sample was subsequently annealed at 650 °C in a gas mixture that was 4% H2 + 96% Ar. Rutherford Backscattering spectrometry (RBS) analysis with 1.5 MeV Alpha particles was used to monitor the precipitate formation. Photoluminescence (PL) measurements were also performed to study possible applications of silicides in light emission. Cross-sectional Scanning Electron Microscopy (X-SEM) was performed for topographic image of the implanted region. RBS along with PL measurements indicate that the presence of osmium silicide (Os2Si3) phase for light emission in the implanted region of the sample.

Electron detachment cross-sections in low energy heavy negative ion beam appratus

Vacuum ◽  
1989 ◽  
Vol 39 (11-12) ◽  
pp. 1127-1130 ◽  
Author(s):  
J Ishikawa ◽  
H Tsuji ◽  
T Maekawa
Keyword(s):  
Cross Sections ◽  
Ion Beam ◽  
Low Energy ◽  
Negative Ion ◽  
Electron Detachment

Energy straggling of low-energy ion beam in a charge exchange cell for negative ion production

2008 ◽  
Vol 79 (2) ◽  
pp. 02A509 ◽  
Author(s):  
S. Takeuchi ◽  
M. Sasao ◽  
H. Sugawara ◽  
N. Tanaka ◽  
M. Kisaki ◽  
...  
Keyword(s):  
Charge Exchange ◽  
Ion Beam ◽  
Low Energy ◽  
Negative Ion ◽  
Ion Production ◽  
A Charge ◽  
Energy Straggling

scholarly journals Ion Energy Dependence of N/C Ratio in Low Energy CN Molecular Negative-ion Beam Deposited Films.

Shinku ◽  
1999 ◽  
Vol 42 (3) ◽  
pp. 229-232
Author(s):  
Takaaki YOSHIHARA ◽  
Hiroshi TSUJI ◽  
Yasuhito GOTOH ◽  
Junzo ISHIKAWA
Keyword(s):  
Energy Dependence ◽  
Ion Beam ◽  
Low Energy ◽  
Negative Ion ◽  
Ion Energy ◽  
Deposited Films

Ion Energy Dependence of Inter-atomic Bonding State of Carbon Films Deposited by Low-Energy Carbon-Negative Ion Beam.

Shinku ◽  
1999 ◽  
Vol 42 (3) ◽  
pp. 221-224 ◽  
Author(s):  
Hiroshi TSUJI ◽  
Syuichi NAKAMURA ◽  
Takaaki YOSHIHARA ◽  
Yasuhito GOTOH ◽  
Junzo ISHIKAWA
Keyword(s):  
Energy Dependence ◽  
Ion Beam ◽  
Carbon Films ◽  
Low Energy ◽  
Negative Ion ◽  
Ion Energy ◽  
Bonding State

scholarly journals Low energy ion beam transport by permanent magnets

1980 ◽  
Vol 51 (4) ◽  
pp. 500-503 ◽  
Author(s):  
K. W. Ehlers ◽  
K. N. Leung
Keyword(s):  
Permanent Magnets ◽  
Ion Beam ◽  
Low Energy ◽  
Beam Transport

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

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