scholarly journals Testicular Toxicity of Gallium Arsenide, Indium Arsenide, and Arsenic Oxide in Rats by Repetitive Intratracheal Instillation

1996 ◽  
Vol 32 (1) ◽  
pp. 72-78 ◽  
Author(s):  
MINORU OMURA ◽  
AKIYO TANAKA ◽  
MIYUKI HIRATA ◽  
MANGEN ZHAO ◽  
YUJI MAKITA ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Intratracheal Instillation ◽  
Testicular Toxicity ◽  
Arsenic Oxide

Testicular toxicity evaluation of arsenic-containing binary compound semiconductors, gallium arsenide and indium arsenide, in hamsters

1996 ◽  
Vol 89 (2) ◽  
pp. 123-129 ◽  
Author(s):  
Minoru Omura ◽  
Miyuki Hirata ◽  
Akiyo Tanaka ◽  
Mangen Zhao ◽  
Yuji Makita ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Compound Semiconductors ◽  
Binary Compound ◽  
Testicular Toxicity ◽  
Toxicity Evaluation

Phonon emission by optically pumped indium arsenide quantum dots in gallium arsenide

2002 ◽  
Vol 316-317 ◽  
pp. 198-201 ◽  
Author(s):  
A.J. Kent ◽  
A.V. Akimov ◽  
S.A. Cavill ◽  
R.J. Bellingham ◽  
M. Henini
Keyword(s):  
Quantum Dots ◽  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Optically Pumped ◽  
Phonon Emission

Observation of Surfactant Properties of Thallium in the Epitaxial Growth of Indium Arsenide on Gallium Arsenide

1999 ◽  
Vol 570 ◽  
Author(s):  
D.F. Storm ◽  
M.D. Lange
Keyword(s):  
Gallium Arsenide ◽  
Electronic Properties ◽  
Epitaxial Growth ◽  
Indium Arsenide ◽  
Lattice Mismatch ◽  
Layer By Layer ◽  
Surfactant Properties ◽  
Large Lattice ◽  
Layer Mode ◽  
Large Lattice Mismatch

ABSTRACTBecause of the large lattice mismatch between InAs and GaAs, the growth of the former on the (001) surface of the latter undergoes a well-known transition from a layer-by-layer mode to an island mode at an equivalent coverage of 1–2 monolayers (ML). We have observed a suppression of this transition when growth proceeds under a simultaneous thallium flux. The thallium is not significantly incorporated into the InAs layer; however, approximately I ML may remain at the interface. The effect of the thallium on the electronic properties of the InAs is investigated.

Low-Energy Ion Technique for Semiconductor Surface Preparation

2018 ◽  
Vol 284 ◽  
pp. 198-203
Author(s):  
S.N. Chebotarev ◽  
V.A. Irkha ◽  
Adnan A.A. Mohamed
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Surface Preparation ◽  
Target Surface ◽  
Low Energy ◽  
Etching Time ◽  
Semiconductor Surface ◽  
Two Component ◽  
Argon Ions ◽  
Sputtering Yields

We proposed an experimental technique for determining the sputtering yields of two-component semiconductors – gallium arsenide and indium arsenide by low-energy argon ions. It was suggested to measure the volume of a crater formed by inert ions bombarding on the target surface using the method of scanning laser confocal microscopy. It was demonstrated that in the energy range from 100 to 300 eV, the energy dependence of sputtering yields for these materials is practically linear. It is established that the sputtering yields for normal bombardment by argon ions at optimum energy of 150 eV are equal to Y(GaAs) = 0.41 and Y(InAs) = 0.73. It is found that an increase in the etching time of the surface of gallium arsenide and indium arsenide leads to a characteristic transformation of the surface relief. The studies of the sputtering of two-component targets indicate the initial strong non-stechiometry. Etching for a certain period of time leads to an equalization of the concentrations of the sputtered components. It was found that to obtain a uniform composition of the mass flow it is necessary to pre-sputter the targets with shielded substrates.

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