scholarly journals Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN∕GaN quantum wells

2007 ◽  
Vol 90 (15) ◽  
pp. 151122 ◽  
Author(s):  
Chi-Feng Huang ◽  
Chih-Feng Lu ◽  
Tsung-Yi Tang ◽  
Jeng-Jie Huang ◽  
C. C. Yang
2008 ◽  
Vol 92 (9) ◽  
pp. 091110 ◽  
Author(s):  
Il-Kyu Park ◽  
Ja-Yeon Kim ◽  
Min-Ki Kwon ◽  
Chu-Young Cho ◽  
Jae-Hong Lim ◽  
...  

2008 ◽  
Author(s):  
Chu-young Cho ◽  
Il-Kyu Park ◽  
Min-Ki Kwon ◽  
Ja-Yeon Kim ◽  
Seong-Ju Park ◽  
...  

2012 ◽  
Vol 51 ◽  
pp. 09MH03
Author(s):  
Byoung Wook Kwon ◽  
Dong Ick Son ◽  
Dong-Hee Park ◽  
Heon-Jin Choi ◽  
Won-Kook Choi

2017 ◽  
Vol 41 (18) ◽  
pp. 9826-9839 ◽  
Author(s):  
Boddula Rajamouli ◽  
Rachna Devi ◽  
Abhijeet Mohanty ◽  
Venkata Krishnan ◽  
Sivakumar Vaidyanathan

The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).


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