scholarly journals Thermal emission from large area chemical vapor deposited graphene devices

2013 ◽  
Vol 103 (13) ◽  
pp. 131906 ◽  
Author(s):  
I. J. Luxmoore ◽  
C. Adlem ◽  
T. Poole ◽  
L. M. Lawton ◽  
N. H. Mahlmeister ◽  
...  
Keyword(s):  
Thermal Emission ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposited ◽  
Graphene Devices

Characteristics of Large-Area Plasma Enhanced Chemical Vapor Deposited TEOS Oxide with Various Short-Time Plasma Treatments

2001 ◽  
Vol 685 ◽  
Author(s):  
Ting-Kuo Chang ◽  
Ching-Wei Lin ◽  
Chang-Ho Tseng ◽  
Huang-Chung Cheng ◽  
Yuan-Ching Peng ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Electrical Strength ◽  
Large Area ◽  
Plasma Treatments ◽  
Chemical Vapor Deposited ◽  
Bias Temperature Stress ◽  
Short Time ◽  
Harmful Effects

AbstractIn this work, high quality silicon dioxide (SiO2) films were prepared by large-area plasmaenhanced chemical vapor deposition (LA-PECVD) using tetraethylorthosilicate(TEOS)-oxygen based chemistry. The effects of various short-time plasma treatments on these as-deposited TEOS oxide were also investigated. Different plasma treatments such as O2, N2O, and NH3 were used in our experiments. Electrical characteristics were exploited to examine the effects of plasma treatments. It was shown that after N2O, and NH3 plasma treatments, the electrical strength of oxide was enhanced. Besides, NH3 plasma treatment exhibited the highest enhancement efficiency. O2- plasma treatment, however, showed some harmful effects on the electrical properties of the TEOS oxide. The reliability tests including charge to breakdown (Qbd) and bias temperature stress (BTS) were also analyzed in these samples. Although better pre-stress characteristics were observed in those samples treated by NH3-plasma, samples with N2O plasma treatment showed superior stress endurance. Consequently, N2O plasma treatment seems to be the best candidate for future TFTs under the consideration of long-term reliability.

scholarly journals Electrical Homogeneity of Large-Area Chemical Vapor Deposited Multilayer Hexagonal Boron Nitride Sheets

2017 ◽  
Vol 9 (46) ◽  
pp. 39895-39900 ◽  
Author(s):  
Fei Hui ◽  
Wenjing Fang ◽  
Wei Sun Leong ◽  
Tewa Kpulun ◽  
Haozhe Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposited

scholarly journals Correction: Tunable large-area phase reversion in chemical vapor deposited few-layer MoTe2 films

2019 ◽  
Vol 7 (37) ◽  
pp. 11650-11650
Author(s):  
Xukun Zhu ◽  
Aolin Li ◽  
Di Wu ◽  
Peng Zhu ◽  
Haiyan Xiang ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposited

Correction for ‘Tunable large-area phase reversion in chemical vapor deposited few-layer MoTe2 films’ by Xukun Zhu et al., J. Mater. Chem. C, 2019, 7, 10598–10604.

Tunable large-area phase reversion in chemical vapor deposited few-layer MoTe2 films

2019 ◽  
Vol 7 (34) ◽  
pp. 10598-10604 ◽  
Author(s):  
Xukun Zhu ◽  
Aolin Li ◽  
Di Wu ◽  
Peng Zhu ◽  
Haiyan Xiang ◽  
...  
Keyword(s):  
Phase Transition ◽  
Heat Treatment ◽  
Large Scale ◽  
Chemical Vapor ◽  
Large Area ◽  
Reversible Phase Transition ◽  
Chemical Vapor Deposited ◽  
Reversible Phase

A local large-scale reversible phase transition of MoTe2 film was accomplished through the heat treatment.

Optical properties of large-area polycrystalline chemical vapor deposited graphene by spectroscopic ellipsometry

2010 ◽  
Vol 97 (25) ◽  
pp. 253110 ◽  
Author(s):  
F. J. Nelson ◽  
V. K. Kamineni ◽  
T. Zhang ◽  
E. S. Comfort ◽  
J. U. Lee ◽  
...  
Keyword(s):  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposited

HIGH FREQUENCY GRAPHENE TRANSISTORS USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS

2011 ◽  
Vol 20 (03) ◽  
pp. 669-677
Author(s):  
OSAMA M. NAYFEH ◽  
TONY IVANOV ◽  
JAMES WILSON ◽  
ROBERT PROIE ◽  
MADAN DUBEY
Keyword(s):  
High Frequency ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Monolayer Graphene ◽  
Large Area ◽  
Cvd Graphene ◽  
Ambipolar Behavior ◽  
Chemical Vapor Deposited ◽  
First Time

Graphene transistors using large area chemical-vapor-deposited (CVD) monolayer graphene and advanced dielectric stacks are constructed and examined. Top-gated devices with a SiO 2/ Al 2 O 3 gate-dielectric have a Dirac Point (DP) located at less than 5 V and asymmetric electron/hole mobility. In contrast, devices based on an advanced AlN interfacial layer have a DP located near 0V and a near symmetric carrier mobility- characteristics that could be more suitable for applications that require ambipolar behavior and low-power operation. For the first time, a measured RF cut-off frequency range of 1GHz is measured for top-gated transistors using CVD graphene. The results are of importance for the realization of graphene based, wafer-scale, high frequency electronics.

Plasma Oxidation Followed by Vapor Removal for Enhancing Intactness of Transferred Large-Area Graphene

2020 ◽  
Vol 12 (8) ◽  
pp. 1252-1260
Author(s):  
Pan Zhang ◽  
Xiaojun Dai ◽  
Li-Ping Wu ◽  
Huaqiang Cai ◽  
Jing-Gang Gai
Keyword(s):  
Polymethyl Methacrylate ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Wearable Electronics ◽  
Photovoltaic Devices ◽  
Large Area ◽  
Display Devices ◽  
Chemical Vapor Deposited ◽  
Potential Applications ◽  
Wide Potential

Transfering large-area graphene from the metal substrate to the target substrate is crucial to its wide potential applications in electromagnetic shielding, supercapacitor, DNA sequencing, seawater desalination, wearable electronics devices, display devices for OLEDs and touch-screen. Polymethyl methacrylate assisted transfer is being widely adopted, however, this technique tends to destroy graphene and to produce polymethyl methacrylate residues on the graphene surface. Here, we reduced the damage of graphene by improving the hydrophilicity and adhesion of graphene and substrate using O2 plasma followed by heat treatment, and removed the polymethyl methacrylate residuals on the surface of graphene using hot acetone vapor. Both monolayer and multilayer graphene stacks were transferred onto the target substrate with dramatically improved surface hydrophilicity (contact angle decreased from 57.8° to 6.0°), and neither damage nor undesired residues were found. Especially, in the whole test band (400–1100 nm), all transferred graphene stacks exhibited transmittances higher than 90%. This work may bring opportunities for exploitation of large-area chemical-vapor-deposited graphene in wider transparent and ultra-thin photovoltaic devices fields.

Study of the Thermal and Intrinsic Stress of Large Area Diamond Film Prepared by HFCVD

2008 ◽  
Vol 375-376 ◽  
pp. 123-127 ◽  
Author(s):  
Feng Xu ◽  
Dun Wen Zuo ◽  
Wen Zhuang Lu ◽  
Min Wang ◽  
Hai Yu Zhang
Keyword(s):  
Thermal Stress ◽  
Thick Film ◽  
Diamond Film ◽  
Chemical Vapor ◽  
Intrinsic Stress ◽  
Large Area ◽  
Element Analysis ◽  
Fea Model ◽  
Chemical Vapor Deposited ◽  
Set Up

High residual stress that includes thermal and intrinsic stress is an obstacle to the further application of chemical vapor deposited diamond thick film. In this paper, CVD diamond thick film was deposited on silicon substrate by hot filament chemical vapor deposited (HFCVD) system. The finite element analysis (FEA) simulation and experimental research were carried out on the thermal and intrinsic stress of large area diamond thick film. The FEA model is set up to investigate the distribution and magnitude of thermal stress. The intrinsic stress is studied by X-Ray diffraction “sin2ψ” method. The thermal stress and intrinsic stress are both compression stress. Simulation results show the discontinuous sharp of the diamond film result in the stress concentration and low cooling velocity is a good way to reduce thermal stress. The intrinsic stress is correlative with the microstructure and non-diamond component of diamond film. The origin of the intrinsic stress is discussed in detail in this paper.

Sign in / Sign up

Export Citation Format

Share Document