Large-Area Chemical Vapor Deposited MoS2with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics

2017 ◽  
Vol 27 (41) ◽  
pp. 1703119 ◽  
Author(s):  
Zhenyu Dai ◽  
Zhenwei Wang ◽  
Xin He ◽  
Xi-Xiang Zhang ◽  
Husam N. Alshareef
2002 ◽  
Vol 16 (01n02) ◽  
pp. 308-313 ◽  
Author(s):  
YUE WANG ◽  
HAO GONG ◽  
LING LIU

P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO 2. After annealing, metal copper turned into CuO . Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.


2001 ◽  
Vol 685 ◽  
Author(s):  
Ting-Kuo Chang ◽  
Ching-Wei Lin ◽  
Chang-Ho Tseng ◽  
Huang-Chung Cheng ◽  
Yuan-Ching Peng ◽  
...  

AbstractIn this work, high quality silicon dioxide (SiO2) films were prepared by large-area plasmaenhanced chemical vapor deposition (LA-PECVD) using tetraethylorthosilicate(TEOS)-oxygen based chemistry. The effects of various short-time plasma treatments on these as-deposited TEOS oxide were also investigated. Different plasma treatments such as O2, N2O, and NH3 were used in our experiments. Electrical characteristics were exploited to examine the effects of plasma treatments. It was shown that after N2O, and NH3 plasma treatments, the electrical strength of oxide was enhanced. Besides, NH3 plasma treatment exhibited the highest enhancement efficiency. O2- plasma treatment, however, showed some harmful effects on the electrical properties of the TEOS oxide. The reliability tests including charge to breakdown (Qbd) and bias temperature stress (BTS) were also analyzed in these samples. Although better pre-stress characteristics were observed in those samples treated by NH3-plasma, samples with N2O plasma treatment showed superior stress endurance. Consequently, N2O plasma treatment seems to be the best candidate for future TFTs under the consideration of long-term reliability.


2017 ◽  
Vol 9 (46) ◽  
pp. 39895-39900 ◽  
Author(s):  
Fei Hui ◽  
Wenjing Fang ◽  
Wei Sun Leong ◽  
Tewa Kpulun ◽  
Haozhe Wang ◽  
...  

2019 ◽  
Vol 7 (37) ◽  
pp. 11650-11650
Author(s):  
Xukun Zhu ◽  
Aolin Li ◽  
Di Wu ◽  
Peng Zhu ◽  
Haiyan Xiang ◽  
...  

Correction for ‘Tunable large-area phase reversion in chemical vapor deposited few-layer MoTe2 films’ by Xukun Zhu et al., J. Mater. Chem. C, 2019, 7, 10598–10604.


2019 ◽  
Vol 7 (34) ◽  
pp. 10598-10604 ◽  
Author(s):  
Xukun Zhu ◽  
Aolin Li ◽  
Di Wu ◽  
Peng Zhu ◽  
Haiyan Xiang ◽  
...  

A local large-scale reversible phase transition of MoTe2 film was accomplished through the heat treatment.


1999 ◽  
Vol 597 ◽  
Author(s):  
John McAleese ◽  
L. Gary Provost ◽  
Gary S. Tompa ◽  
Andrei Colibaba-Evulet ◽  
Nick G. Gulmac ◽  
...  

AbstractOver the past 30 years, the need for transparent conducting oxide coatings has been met almost exclusively by tin doped indium-oxide. As the display market advances in complexity, the demand for alternative transparent materials exhibiting high conductivity and stability has become greater. In this paper, we discuss briefly the merits of using doped ZnO as a superior transparent conducting oxide. We report here our results in scaling our ZnO MOCVD reactor technology from 5° to 12° diameter susceptors. Using Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition, we have been able to obtain large area uniformity on multiple (14 cm × 9 cm) glass sheets per deposition run. Promising film characteristics suggest significant application in the field of flat panel displays and other optical systems may be possible.


2010 ◽  
Vol 97 (25) ◽  
pp. 253110 ◽  
Author(s):  
F. J. Nelson ◽  
V. K. Kamineni ◽  
T. Zhang ◽  
E. S. Comfort ◽  
J. U. Lee ◽  
...  

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