Manipulation of band structures in wurtzite and zinc-blende GaAs/InAs-core-shell nanowires

2013 ◽  
Vol 114 (11) ◽  
pp. 113704 ◽  
Author(s):  
Changsheng Song ◽  
Jiqing Wang ◽  
Weixian Lin ◽  
Huibing Mao ◽  
Qiang Zhao ◽  
...  
Keyword(s):  
Core Shell ◽  
Band Structures ◽  
Zinc Blende ◽  
Shell Nanowires

All Zinc-Blende GaAs/(Ga,Mn)As Core–Shell Nanowires with Ferromagnetic Ordering

Nano Letters ◽  
2013 ◽  
Vol 13 (4) ◽  
pp. 1572-1577 ◽  
Author(s):  
Xuezhe Yu ◽  
Hailong Wang ◽  
Dong Pan ◽  
Jianhua Zhao ◽  
Jennifer Misuraca ◽  
...  
Keyword(s):  
Core Shell ◽  
Zinc Blende ◽  
Ferromagnetic Ordering ◽  
Shell Nanowires

Spatial confinement of carriers and tunable band structures in InAs/InP-core–shell nanowires

2010 ◽  
Vol 495 (4-6) ◽  
pp. 261-265 ◽  
Author(s):  
Haibo Shu ◽  
Xiaoshuang Chen ◽  
Xiaohao Zhou ◽  
Wei Lu
Keyword(s):  
Core Shell ◽  
Band Structures ◽  
Spatial Confinement ◽  
Shell Nanowires

scholarly journals Zinc blende-oxide phase transformation upon oxygen annealing of ZnSe shell in ZnO-ZnSe core-shell nanowires

2017 ◽  
Vol 110 (10) ◽  
pp. 101601 ◽  
Author(s):  
S. Jabri ◽  
G. Amiri ◽  
S. Hassani ◽  
A. Lusson ◽  
V. Sallet ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Oxide Phase ◽  
Core Shell ◽  
Oxygen Annealing ◽  
Zinc Blende ◽  
Shell Nanowires

scholarly journals Bi Incorporation and Segregation in the MBE-Grown GaAs-(Ga,Al)As-Ga(As,Bi) Core-Shell Nanowires

2021 ◽  
Author(s):  
Janusz Sadowski ◽  
Anna Kaleta ◽  
Serhii Kryvyi ◽  
Dorota Janaszko ◽  
Bogusława Kurowska ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Growth Conditions ◽  
Nanowire Growth ◽  
Core Shell ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Shell Nanowires

Abstract Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(100) substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.

Enhanced efficiency of p-type doping by band-offset effect in wurtzite and zinc-blende GaAs/InAs-core-shell nanowires

2014 ◽  
Vol 116 (9) ◽  
pp. 093704
Author(s):  
Changsheng Song ◽  
Jiqing Wang ◽  
Weixian Lin ◽  
Huibing Mao ◽  
Qiang Zhao ◽  
...  
Keyword(s):  
Band Offset ◽  
Core Shell ◽  
Zinc Blende ◽  
P Type ◽  
Offset Effect ◽  
Shell Nanowires

scholarly journals Growth of Pure Zinc-Blende GaAs(P) Core–Shell Nanowires with Highly Regular Morphology

Nano Letters ◽  
2017 ◽  
Vol 17 (8) ◽  
pp. 4946-4950 ◽  
Author(s):  
Yunyan Zhang ◽  
H. Aruni Fonseka ◽  
Martin Aagesen ◽  
James A. Gott ◽  
Ana M. Sanchez ◽  
...  
Keyword(s):  
Core Shell ◽  
Pure Zinc ◽  
Zinc Blende ◽  
Shell Nanowires

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

scholarly journals Broadband Meta‐Absorber with Au/Ni Core–Shell Nanowires for Solar Vapor Generator

2021 ◽  
Vol 5 (7) ◽  
pp. 2100185
Author(s):  
Soomin Son ◽  
Jaemin Park ◽  
Sucheol Ju ◽  
Daihong Huh ◽  
Junho Jun ◽  
...  
Keyword(s):  
Core Shell ◽  
Vapor Generator ◽  
Shell Nanowires
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