2008 International Conference on Simulation of Semiconductor Processes and Devices
Latest Publications

TOTAL DOCUMENTS

106

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H-INDEX

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Published By IEEE

9781424417537

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements

2008 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2008.4648260 ◽

2008 ◽

Author(s):

Manuel Aldegunde ◽

Antonio J. Garcia-Loureiro ◽

Antonio Martinez ◽

Karol Kalna

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Finite Elements ◽

3D Monte Carlo

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Band calculation for the hexagonal and FCC chalcogenide Ge2Sb2Te5

2008 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2008.4648279 ◽

2008 ◽

Author(s):

Enrico Piccinini ◽

Thierry Tsafack ◽

Fabrizio Buscemiy ◽

Rossella Brunettiy ◽

Massimo Rudan ◽

...

Keyword(s):

Band Calculation

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Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF

2008 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2008.4648263 ◽

2008 ◽

Cited By ~ 1

Author(s):

Ming Zhang ◽

Qiushi Ran ◽

Ximeng Guan ◽

Jinyu Zhang ◽

Yan Wang ◽

...

Keyword(s):

Simulation Study

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Wigner Monte Carlo approach to quantum transport in nanodevices

2008 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2008.4648291 ◽

2008 ◽

Cited By ~ 4

Author(s):

P. Dollfus ◽

D. Querlioz ◽

J. Saint-Martin ◽

V.-N. Do ◽

A. Bournel

Keyword(s):

Monte Carlo ◽

Quantum Transport ◽

Monte Carlo Approach

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Performance evaluation of uniaxial- and biaxial-strained In(x)Ga(1−x)As NMOS DGFETs

2008 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2008.4648247 ◽

2008 ◽

Author(s):

Donghyun Kim ◽

Tejas Krishnamohan ◽

Krishna C. Saraswat

Keyword(s):

Performance Evaluation

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Effects of wavefunction modulation on electron transport in ultrathin-body DG MOSFETs

2008 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2008.4648276 ◽

2008 ◽

Cited By ~ 1

Author(s):

Nobuya Mori ◽

Hideki Minari

Keyword(s):

Electron Transport

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Consistent higher-order transport models for SOI MOSFETs

2008 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2008.4648254 ◽

2008 ◽

Cited By ~ 1

Author(s):

Martin Vasicek ◽

Johann Cervenka ◽

Markus Karner ◽

Tibor Grasser

Keyword(s):

Higher Order ◽

Transport Models

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Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs

2008 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2008.4648267 ◽

2008 ◽

Cited By ~ 2

Author(s):

Siddharth Potbhare ◽

Akin Akturk ◽

Neil Goldsman ◽

Aivars Lelis

Keyword(s):

Quantum Confinement ◽

Interface Trap

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Numerical modeling of a deoxyribonucleic acid microassay: Carbon nanotube thin film transistor sensor

2008 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2008.4648245 ◽

2008 ◽

Author(s):

Akin Akturk ◽

Neil Goldsman ◽

Herman Pandana ◽

Romel Gomez ◽

Javed Khan

Keyword(s):

Thin Film ◽

Numerical Modeling ◽

Carbon Nanotube ◽

Deoxyribonucleic Acid ◽

Thin Film Transistor

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Ion implantation model for channeling through multi-layers

2008 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2008.4648284 ◽

2008 ◽

Cited By ~ 1

Author(s):

T. Yamanaka ◽

K. Nishi ◽

H.D. Nguyen ◽

M. Mochizuki ◽

H. Hayashi ◽

...

Keyword(s):

Ion Implantation ◽

Implantation Model

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2008 International Conference on Simulation of Semiconductor Processes and DevicesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements

Band calculation for the hexagonal and FCC chalcogenide Ge2Sb2Te5

Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF

Wigner Monte Carlo approach to quantum transport in nanodevices

Performance evaluation of uniaxial- and biaxial-strained In(x)Ga(1−x)As NMOS DGFETs

Effects of wavefunction modulation on electron transport in ultrathin-body DG MOSFETs

Consistent higher-order transport models for SOI MOSFETs

Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs

Numerical modeling of a deoxyribonucleic acid microassay: Carbon nanotube thin film transistor sensor

Ion implantation model for channeling through multi-layers

2008 International Conference on Simulation of Semiconductor Processes and Devices
Latest Publications