Enhanced efficiency of p-type doping by band-offset effect in wurtzite and zinc-blende GaAs/InAs-core-shell nanowires

2014 ◽  
Vol 116 (9) ◽  
pp. 093704
Author(s):  
Changsheng Song ◽  
Jiqing Wang ◽  
Weixian Lin ◽  
Huibing Mao ◽  
Qiang Zhao ◽  
...  
Keyword(s):  
Band Offset ◽  
Core Shell ◽  
Zinc Blende ◽  
P Type ◽  
Offset Effect ◽  
Shell Nanowires

Band-offset effect on localization of carriers and p-type doping of InAs/GaAs core–shell nanowires

2013 ◽  
Vol 377 (21-22) ◽  
pp. 1464-1468 ◽  
Author(s):  
Haibo Shu ◽  
Dan Cao ◽  
Pei Liang ◽  
Xiaoshuang Chen ◽  
Wei Lu
Keyword(s):  
Band Offset ◽  
Core Shell ◽  
P Type ◽  
Offset Effect ◽  
Shell Nanowires

All Zinc-Blende GaAs/(Ga,Mn)As Core–Shell Nanowires with Ferromagnetic Ordering

Nano Letters ◽  
2013 ◽  
Vol 13 (4) ◽  
pp. 1572-1577 ◽  
Author(s):  
Xuezhe Yu ◽  
Hailong Wang ◽  
Dong Pan ◽  
Jianhua Zhao ◽  
Jennifer Misuraca ◽  
...  
Keyword(s):  
Core Shell ◽  
Zinc Blende ◽  
Ferromagnetic Ordering ◽  
Shell Nanowires

scholarly journals Zinc blende-oxide phase transformation upon oxygen annealing of ZnSe shell in ZnO-ZnSe core-shell nanowires

2017 ◽  
Vol 110 (10) ◽  
pp. 101601 ◽  
Author(s):  
S. Jabri ◽  
G. Amiri ◽  
S. Hassani ◽  
A. Lusson ◽  
V. Sallet ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Oxide Phase ◽  
Core Shell ◽  
Oxygen Annealing ◽  
Zinc Blende ◽  
Shell Nanowires

scholarly journals Bi Incorporation and Segregation in the MBE-Grown GaAs-(Ga,Al)As-Ga(As,Bi) Core-Shell Nanowires

2021 ◽  
Author(s):  
Janusz Sadowski ◽  
Anna Kaleta ◽  
Serhii Kryvyi ◽  
Dorota Janaszko ◽  
Bogusława Kurowska ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Growth Conditions ◽  
Nanowire Growth ◽  
Core Shell ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Shell Nanowires

Abstract Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(100) substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.

Engineering the Effective p-Type Dopant in GaAs/InAs Core–Shell Nanowires with Surface Dangling Bonds

2014 ◽  
Vol 118 (43) ◽  
pp. 25209-25214 ◽  
Author(s):  
Changsheng Song ◽  
Jiqing Wang ◽  
Zhixiang Zhang ◽  
Huibing Mao ◽  
Qiang Zhao ◽  
...  
Keyword(s):  
Core Shell ◽  
Dangling Bonds ◽  
P Type ◽  
Shell Nanowires

scholarly journals Remote p-type Doping in GaSb/InAs Core-shell Nanowires

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Feng Ning ◽  
Li-Ming Tang ◽  
Yong Zhang ◽  
Ke-Qiu Chen
Keyword(s):  
Core Shell ◽  
P Type ◽  
Shell Nanowires

scholarly journals Growth of Pure Zinc-Blende GaAs(P) Core–Shell Nanowires with Highly Regular Morphology

Nano Letters ◽  
2017 ◽  
Vol 17 (8) ◽  
pp. 4946-4950 ◽  
Author(s):  
Yunyan Zhang ◽  
H. Aruni Fonseka ◽  
Martin Aagesen ◽  
James A. Gott ◽  
Ana M. Sanchez ◽  
...  
Keyword(s):  
Core Shell ◽  
Pure Zinc ◽  
Zinc Blende ◽  
Shell Nanowires

scholarly journals Band-Offset Driven Efficiency of the Doping of SiGe Core−Shell Nanowires

Nano Letters ◽  
2011 ◽  
Vol 11 (2) ◽  
pp. 594-598 ◽  
Author(s):  
Michele Amato ◽  
Stefano Ossicini ◽  
Riccardo Rurali
Keyword(s):  
Band Offset ◽  
Core Shell ◽  
Shell Nanowires
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