The effects of plasma exposure and vacuum ultraviolet irradiation on photopatternable low-k dielectric materials

2013 ◽  
Vol 114 (10) ◽  
pp. 104107 ◽  
Author(s):  
M. T. Nichols ◽  
K. Mavrakakis ◽  
Q. Lin ◽  
J. L. Shohet
Keyword(s):  
Ultraviolet Irradiation ◽  
Vacuum Ultraviolet ◽  
Dielectric Materials ◽  
Plasma Exposure ◽  
Low K

Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress

2015 ◽  
Vol 106 (1) ◽  
pp. 012904 ◽  
Author(s):  
X. Guo ◽  
S. W. King ◽  
H. Zheng ◽  
P. Xue ◽  
Y. Nishi ◽  
...  
Keyword(s):  
Temperature Stress ◽  
Ultraviolet Irradiation ◽  
Vacuum Ultraviolet ◽  
Bias Temperature Stress ◽  
Low K

Low-k Integration Using Metallic Hard Masks

2012 ◽  
Vol 187 ◽  
pp. 193-195 ◽  
Author(s):  
O. Joubert ◽  
Nicolas Possémé ◽  
Thierry Chevolleau ◽  
Thibaut David ◽  
M. Darnon
Keyword(s):  
Metal Contamination ◽  
High Sensitivity ◽  
Dielectric Materials ◽  
Plasma Exposure ◽  
Air Exposure ◽  
Hard Mask ◽  
Patterned Structures ◽  
Complex Integration ◽  
Interconnect Technology ◽  
Low K

For the 45 nm interconnect technology node, porous dielectric materials (p-SiOCH) have been introduced, leading to complex integration issues due to their high sensitivity upon FC etching and ashing plasma exposure [1, 2]. Thanks to Metallic hard mask (MHM) integration high selectivities towards dielectric materials (>100:1) can be reached and minimizes exposure of p-SiOCH films to ashing plasmas. However MHM such as TiN generates other issues such as i) metal contamination in the patterned structures and ii) growth of metal based residues on the top of the hard mask [3, 4, 5]. The residues growth, which is air exposure time dependent, directly impacts the yield performance with the generation of via and line opens [.

Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics

2010 ◽  
Vol 96 (5) ◽  
pp. 052901 ◽  
Author(s):  
H. Sinha ◽  
J. L. Lauer ◽  
M. T. Nichols ◽  
G. A. Antonelli ◽  
Y. Nishi ◽  
...  
Keyword(s):  
Ultraviolet Irradiation ◽  
Vacuum Ultraviolet ◽  
Capacitance Voltage ◽  
Low K

Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation

2014 ◽  
Vol 104 (6) ◽  
pp. 062904 ◽  
Author(s):  
H. Zheng ◽  
S. W. King ◽  
V. Ryan ◽  
Y. Nishi ◽  
J. L. Shohet
Keyword(s):  
Ultraviolet Irradiation ◽  
Vacuum Ultraviolet ◽  
Low K

Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation

2011 ◽  
Author(s):  
J. L. Shohet ◽  
H. Sinha ◽  
H. Ren ◽  
M. T. Nichols ◽  
Y. Nishi ◽  
...  
Keyword(s):  
Ultraviolet Irradiation ◽  
Vacuum Ultraviolet ◽  
Organosilicate Glass ◽  
Low K

The effects of plasma exposure on low- k dielectric materials

2012 ◽  
Author(s):  
J. L. Shohet ◽  
H. Ren ◽  
M. T. Nichols ◽  
H. Sinha ◽  
W. Lu ◽  
...  
Keyword(s):  
Dielectric Materials ◽  
Plasma Exposure ◽  
Low K

Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics

2014 ◽  
Vol 105 (20) ◽  
pp. 202902 ◽  
Author(s):  
H. Zheng ◽  
E. T. Ryan ◽  
Y. Nishi ◽  
J. L. Shohet
Keyword(s):  
Dielectric Constant ◽  
Ultraviolet Irradiation ◽  
Vacuum Ultraviolet ◽  
Low K
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