Temperature dependence of the dielectric functions and the critical points of InSb by spectroscopic ellipsometry from 31 to 675 K

2013 ◽  
Vol 114 (10) ◽  
pp. 103501 ◽  
Author(s):  
Tae Jung Kim ◽  
Soon Yong Hwang ◽  
Jun Seok Byun ◽  
Mangesh S. Diware ◽  
Junho Choi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Spectroscopic Ellipsometry ◽  
Critical Points

Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry

2000 ◽  
Vol 77 (11) ◽  
pp. 1650-1652 ◽  
Author(s):  
G. Leibiger ◽  
V. Gottschalch ◽  
B. Rheinländer ◽  
J. Šik ◽  
M. Schubert
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Critical Points

scholarly journals Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

2017 ◽  
Vol 421 ◽  
pp. 905-912 ◽  
Author(s):  
Nalin S. Fernando ◽  
T. Nathan Nunley ◽  
Ayana Ghosh ◽  
Cayla M. Nelson ◽  
Jacqueline A. Cooke ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Critical Points

Dielectric functions and critical points of BexZn1−xTe alloys measured by spectroscopic ellipsometry

2002 ◽  
Vol 81 (27) ◽  
pp. 5156-5158 ◽  
Author(s):  
M. R. Buckley ◽  
F. C. Peiris ◽  
O. Maksimov ◽  
M. Muñoz ◽  
M. C. Tamargo
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Critical Points

Temperature Dependence of Optical Constants of Silver Film Studied by In Situ Spectroscopic Ellipsometry

2008 ◽  
Vol 55-57 ◽  
pp. 445-448 ◽  
Author(s):  
S. Rojebuathong ◽  
P. Chindaudom ◽  
W. Luangtip ◽  
M. Horphatum ◽  
P. Eiamchai ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Temperature Dependence ◽  
Imaginary Part ◽  
Spectroscopic Ellipsometry ◽  
Silver Film ◽  
Dielectric Constants ◽  
Nitrogen Gas ◽  
Scattering Time ◽  
Ag Film

A silver film was deposited on silicon wafer by DC unbalance magnetron sputtering system. The temperature dependence of the silver film was investigated. The spectroscopic ellipsometry (SE) with the heating of sample stage (HTC100) was employed for the in situ SE measurement under annealing cycles of the sample from room temperature to 300°C in dry nitrogen gas. The results show that the pseudo dielectric constants (<ε1>, < ε2>) of the sample varied with an annealing temperature. The real part of pseudo dielectric constant (<ε1>) of annealed Ag film was slightly changed and the imaginary part (< ε2>) was strongly increased at a photon energy below the optical band gap (3.5-4.5 eV). Furthermore, the pseudo dielectric constant of imaginary part at low energy region was changed due to the enhancement of crystallinity of Ag film at 300°C. All measured SE spectra were fitted by Drude-Lorentz optical model, the scattering time and resistivity were obtained.

Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy

2006 ◽  
Vol 3 (6) ◽  
pp. 2009-2013 ◽  
Author(s):  
C. Buchheim ◽  
R. Goldhahn ◽  
A. T. Winzer ◽  
C. Cobet ◽  
M. Rakel ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Critical Points ◽  
Modulation Spectroscopy

Materials Optimization for Silicon Heterojunction Solar Cells Using Spectroscopic Ellipsometry

2007 ◽  
Vol 989 ◽  
Author(s):  
Dean Levi ◽  
Eugene Iwanizcko ◽  
Steve Johnston ◽  
Qi Wang ◽  
Howard M Branz
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Spectroscopic Ellipsometry ◽  
Surface Passivation ◽  
Light Trapping ◽  
Chemical Vapor ◽  
Thin Layers ◽  
Silicon Substrates

AbstractOur research team has used hot wire chemical vapor deposition (HWCVD) to fabricate silicon heterojunction (SHJ) solar cells on p-type FZ silicon substrates with efficiencies as high as 18.2%. The best cells are deposited on anisotropically-textured (100) silicon substrates where an etching process creates pyramidal facets with (111) crystal faces. Texturing increases Jsc through enhanced light trapping, yet our highest Voc devices are deposited on un-textured (100) substrates. One of the key factors in maximizing the efficiency of our SHJ devices is the process of optimization of the material properties of the 3 - 5 nm thick hydrogenated amorphous silicon (a-Si:H) layers used to create the junction and back contact in these cells. Such optimization is technically challenging because of the difficulty in measuring the properties of extremely thin layers. This difficulty is compounded by the fact that the properties of such amorphous layers are substrate- and thickness-dependent. In this study, we have utilized spectroscopic ellipsometry (SE) and photoconductivity decay to conclude that a-Si:H films grown on (111) substrates are substantially similar to films grown on (100) substrates. In addition, analysis of the substrate temperature dependence of surface roughness evolution reveals a substrate-independent mechanism of surface smoothening with an activation energy of 0.28 eV. Analysis of the substrate temperature dependence of surface passivation reveals a passivation mechanism with an activation energy of 0.63 eV.

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