Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry

2000 ◽  
Vol 77 (11) ◽  
pp. 1650-1652 ◽  
Author(s):  
G. Leibiger ◽  
V. Gottschalch ◽  
B. Rheinländer ◽  
J. Šik ◽  
M. Schubert
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Critical Points

Dielectric functions and critical points of BexZn1−xTe alloys measured by spectroscopic ellipsometry

2002 ◽  
Vol 81 (27) ◽  
pp. 5156-5158 ◽  
Author(s):  
M. R. Buckley ◽  
F. C. Peiris ◽  
O. Maksimov ◽  
M. Muñoz ◽  
M. C. Tamargo
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Critical Points

Temperature dependence of the dielectric functions and the critical points of InSb by spectroscopic ellipsometry from 31 to 675 K

2013 ◽  
Vol 114 (10) ◽  
pp. 103501 ◽  
Author(s):  
Tae Jung Kim ◽  
Soon Yong Hwang ◽  
Jun Seok Byun ◽  
Mangesh S. Diware ◽  
Junho Choi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Spectroscopic Ellipsometry ◽  
Critical Points

Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy

2006 ◽  
Vol 3 (6) ◽  
pp. 2009-2013 ◽  
Author(s):  
C. Buchheim ◽  
R. Goldhahn ◽  
A. T. Winzer ◽  
C. Cobet ◽  
M. Rakel ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Critical Points ◽  
Modulation Spectroscopy

Dielectric function and critical points of AlP determined by spectroscopic ellipsometry

2014 ◽  
Vol 587 ◽  
pp. 361-364 ◽  
Author(s):  
S.Y. Hwang ◽  
T.J. Kim ◽  
Y.W. Jung ◽  
N.S. Barange ◽  
H.G. Park ◽  
...  
Keyword(s):  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Critical Points

Effects of Electron Radiation on the Optical Constants of P-Type Silicon

1993 ◽  
Vol 302 ◽  
Author(s):  
Onofrio L. Russo ◽  
Katherine A. Dumas
Keyword(s):  
Critical Point ◽  
Spectroscopic Ellipsometry ◽  
Critical Points ◽  
Line Shape ◽  
Optical Constants ◽  
Electron Radiation ◽  
Main Structure ◽  
Type Silicon ◽  
Lorentz Line ◽  
P Type

ABSTRACTThe optical constants n and k are determined for p-type silicon at the Eo and El and critical point energies for one MeV electron irradiated samples. The value for fluences of 1014 and 1016 e−/cm2 are compared to samples before irradiation. The real, ε1 and imaginary,ε2 components of the dielectric function, ε, used to find n and k, were obtained by measurement of tanψ and δ using spectroscopic ellipsometry (SE). The data show that changes in δ, in particular, are greater in the region about Eo than of E1. This is consistent with electrolyte electroreflectance (EER) results in which the Lorentz line shape is narrower for Eo than for E1. The value of n is found to increase and k to decrease with e- radiation at the critical points, although, neither does so monotonically. The change in n at the Eo critical point is greater than at the higher energy main structure E1 whereas, k is a slower varying function in this region.

Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry

2018 ◽  
Vol 123 (4) ◽  
pp. 045701 ◽  
Author(s):  
Z. L. Bushell ◽  
R. M. Joseph ◽  
L. Nattermann ◽  
P. Ludewig ◽  
K. Volz ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Critical Points ◽  
Optical Functions

Effects of dielectric screening on the excitonic and critical points properties of WS2/MoS2 heterostructures

Nanoscale ◽  
2020 ◽  
Vol 12 (46) ◽  
pp. 23732-23739
Author(s):  
Xudan Zhu ◽  
Junbo He ◽  
Rongjun Zhang ◽  
Chunxiao Cong ◽  
Yuxiang Zheng ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Critical Points ◽  
Dielectric Screening

Explore the broadband excitonic and CPs properties of WS2/MoS2 heterostructure by spectroscopic ellipsometry (SE).

Contribution of the Nanocrystallites and Their Interfaces to the Optical Response of Porous Silicon Layers

1994 ◽  
Vol 358 ◽  
Author(s):  
U. Rossow ◽  
U. Frotscher ◽  
W. Richter ◽  
H. Muender ◽  
M. Thoennissen ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Critical Point ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Critical Points ◽  
Optical Response ◽  
Electrochemical Process ◽  
Strong Indication ◽  
Lineshape Analysis ◽  
Preparation Conditions

ABSTRACTWe discuss the dependence of the dielectric function on the nanocrystalline size of porous silicon layers. The layers were grown by a standard electrochemical process and characterized by spectroscopic ellipsometry. By a lineshape analysis values of the critical point energies and broadening parameters of the Interband critical points were derived. In order to obtain further information about the nanocrystallites, the preparation conditions were varied (HF concentration, NH4F was added) or the layers were further treated by etching and arsenic deposition. The lineshape analysis values indicate that the layers consist mainly of nanocrystallites, or more accurately, that the electrons are confined to regions of a few nanometers in size. Furthermore, there is strong indication that some preparation conditions may leave these nanocrystallites heavily strained .

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