Molecular beam epitaxy growth of novel double-layer InAs quantum dot structures and their optical properties

2005 ◽  
Vol 23 (3) ◽  
pp. 1240
Author(s):  
M. Ohmori ◽  
T. Kawazu ◽  
K. Torii ◽  
H. Sakaki
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Double Layer ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Inas Quantum Dot

Molecular beam epitaxy growth and optical properties of AlN nanowires

2010 ◽  
Vol 96 (6) ◽  
pp. 061912 ◽  
Author(s):  
O. Landré ◽  
V. Fellmann ◽  
P. Jaffrennou ◽  
C. Bougerol ◽  
H. Renevier ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

Evolution of self-assembled InAs quantum dot molecules by molecular beam epitaxy

2012 ◽  
Vol 9 (7) ◽  
pp. 1534-1536 ◽  
Author(s):  
Ong-arj Tangmettajittakul ◽  
Supachok Thainoi ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Molecules ◽  
Self Assembled ◽  
Inas Quantum Dot

Changes in Optical Properties of GaAsN During Annealing

2005 ◽  
Vol 891 ◽  
Author(s):  
Ting Liu ◽  
Sandeep Chandril ◽  
Eric D. Schires ◽  
Nianqiang Wu ◽  
Xinqi Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Annealing Temperature ◽  
Emission Spectra ◽  
X Ray ◽  
Annealing Temperatures ◽  
Gaas Substrates

ABSTRACTGaAs1−xNx layers and quantum dot-like structures were grown on (100) GaAs substrates by molecular beam epitaxy. The dependence of photoluminescence emission spectra on annealing temperature is consistent with literature at lower temperatures but after annealing at 750 °C a net red-shift is consistently observed. X-ray photoelectron spectroscopy measurements indicate that for different annealing times and temperatures, the nitrogen and arsenic surface concentrations changed compared to that of as-grown samples, specifically arsenic is lost from the material. Raman measurements are consistent with the trends in photoluminescence and also suggest the loss of arsenic occurs at higher annealing temperatures in both samples capped with GaAs and uncapped samples.

Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates

2005 ◽  
Vol 278 (1-4) ◽  
pp. 329-334 ◽  
Author(s):  
P. Caroff ◽  
C. Platz ◽  
O. Dehaese ◽  
C. Paranthoën ◽  
N. Bertru ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Quantum Dot Lasers

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb 2 and As 2 fluxes

2008 ◽  
Author(s):  
P. J. Carrington ◽  
V. A. Solov'ev ◽  
Q. Zhuang ◽  
S. V. Ivanov ◽  
A. Krier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Type Ii ◽  
Inas Quantum Dot
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