scholarly journals Single-photon emission in telecommunication band from an InAs quantum dot grown on InP with molecular-beam epitaxy

2013 ◽  
Vol 103 (6) ◽  
pp. 061114 ◽  
Author(s):  
X. Liu ◽  
K. Akahane ◽  
N. A. Jahan ◽  
N. Kobayashi ◽  
M. Sasaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Single Photon ◽  
Photon Emission ◽  
Single Photon Emission ◽  
Inas Quantum Dot

scholarly journals Single-photon emission from isolated monolayer islands of InGaN

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Xiaoxiao Sun ◽  
Ping Wang ◽  
Tao Wang ◽  
Ling Chen ◽  
Zhaoying Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Emission Spectrum ◽  
Molecular Beam ◽  
Single Photon ◽  
Photon Emission ◽  
Optical Analysis ◽  
Single Photon Emission ◽  
Quantum Emitter ◽  
Characteristic Emission

Abstract We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed, and the main transmission is shown to act as a bright, stable, and fast single-photon emitter with a wavelength of ~400 nm.

scholarly journals All-Optical Fiber Hanbury Brown & Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
G. Muñoz-Matutano ◽  
D. Barrera ◽  
C.R. Fernández-Pousa ◽  
R. Chulia-Jordan ◽  
L. Seravalli ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Fiber ◽  
Single Photon ◽  
Photon Emission ◽  
Single Photon Emission ◽  
All Optical ◽  
Inas Quantum Dot

Single-Photon Emission from a Single InAs Quantum Dot

2008 ◽  
Vol 25 (2) ◽  
pp. 501-504 ◽  
Author(s):  
Dou Xiu-Ming ◽  
Sun Bao-Quan ◽  
Huang She-Song ◽  
Ni Hai-Qiao ◽  
Niu Zhi-Chuan
Keyword(s):  
Quantum Dot ◽  
Single Photon ◽  
Photon Emission ◽  
Single Photon Emission ◽  
Inas Quantum Dot

scholarly journals Pure single-photon emission from an InGaN/GaN quantum dot

APL Materials ◽  
2021 ◽  
Vol 9 (6) ◽  
pp. 061106
Author(s):  
M. J. Holmes ◽  
T. Zhu ◽  
F. C.-P. Massabuau ◽  
J. Jarman ◽  
R. A. Oliver ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Single Photon ◽  
Photon Emission ◽  
Single Photon Emission

Self-Assembled GaAs Quantum Rings by MBE Droplet Epitaxy

2007 ◽  
Vol 121-123 ◽  
pp. 541-544
Author(s):  
She Song Huang ◽  
Zhi Chuan Niu ◽  
Jian Bai Xia
Keyword(s):  
Molecular Beam ◽  
Single Photon ◽  
Photon Emission ◽  
Molecular Beams ◽  
Semiconductor Nanostructures ◽  
Droplet Epitaxy ◽  
Single Photon Emission ◽  
Quantum Rings ◽  
Atomic Force ◽  
Surface Migration

Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for realization of solid state quantum information devices, including QDs single photon emission source, QRs single electron memory unit, etc. To fabricate GaAs quantum rings, we use Molecular Beam Epitaxy (MBE) droplet technique in this report. In this droplet technique, Gallium (Ga) molecular beams are supplied initially without Arsenic (As) ambience, forming droplet-like nano-clusters of Ga atoms on the substrate, then the Arsenic beams are supplied to crystallize the Ga droplets into GaAs crystals. Because the morphologies and dimensions of the GaAs crystal are governed by the interplay between the surface migration of Ga and As adatoms and their crystallization, the shape of the GaAs crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and As/Ga flux beam equivalent pressures(BEPs). It has been shown by Atomic force microscope (AFM) measurements that GaAs single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200°C to 300°C under As flux (BEP) of about 1.0×10-6 Torr. The diameter of GaAs rings is about 30-50 nm and thickness several nm.

Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot

2008 ◽  
Vol 25 (9) ◽  
pp. 3231-3233 ◽  
Author(s):  
Dou Xiu-Ming ◽  
Sun Bao-Quan ◽  
Chang Xiu-Ying ◽  
Xiong Yong-Hua ◽  
Huang She-Song ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Liquid Nitrogen ◽  
Single Photon ◽  
Photon Emission ◽  
Liquid Nitrogen Temperature ◽  
Single Photon Emission ◽  
Gaas Quantum Dot

ORGANIC SEMICONDUCTOR MICRO-PILLAR PROCESSED BY FOCUSED ION BEAM MILLING

2005 ◽  
Vol 03 (supp01) ◽  
pp. 223-228 ◽  
Author(s):  
WEN-CHANG HUNG ◽  
A. ADAWI ◽  
A. TAHRAOUI ◽  
A. G. CULLIS
Keyword(s):  
Quantum Dot ◽  
Single Molecule ◽  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Micro Machining ◽  
Single Photon Emission ◽  
Fabrication Procedure ◽  
Pillar Structure

In order to control light, different strategies have been applied by placing an optically active medium into a semiconductor resonator and certain applications such as LEDs and laser diodes have been commercialized for many years. The possibility of nanoscale optical applications has created great interesting for quantum nanostructure research. Recently, single photon emission has been an active area of quantum dot research. A quantum dot is place between distributed Bragg reflectors (DBRs) within a micro-pillar structure. In this study, we shall report on an active layer composed of an organic material instead of a semiconductor. The micro-pillar structure is fabricated by a focused ion beam (FIB) micro-machining technique. The ultimate target is to achieve a single molecule within the micro-pillar and therefore to enable single photon emission. Here, we demonstrate some results of the fabrication procedure of a 5 micron organic micro-pillar via the focused ion beam and some measurement results from this study. The JEOL 6500 dual column system equipped with both electron and ion beams enables us to observe the fabrication procedure during the milling process. Furthermore, the strategy of the FIB micro-machining method is reported as well.

scholarly journals Triggered single-photon emission and cross-correlation properties in InAlAs quantum dot

2006 ◽  
Vol 32 (1-2) ◽  
pp. 144-147 ◽  
Author(s):  
Hidekazu Kumano ◽  
Satoshi Kimura ◽  
Michiaki Endo ◽  
Ikuo Suemune ◽  
Hirotaka Sasakura ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Cross Correlation ◽  
Single Photon ◽  
Photon Emission ◽  
Single Photon Emission ◽  
Correlation Properties
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