Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy

2013 ◽  
Vol 114 (10) ◽  
pp. 103505 ◽  
Author(s):  
Jörg Schörmann ◽  
Pascal Hille ◽  
Markus Schäfer ◽  
Jan Müßener ◽  
Pascal Becker ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gan Nanowires ◽  
Self Assembled

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

2012 ◽  
Vol 100 (21) ◽  
pp. 212107 ◽  
Author(s):  
K. Hestroffer ◽  
C. Leclere ◽  
V. Cantelli ◽  
C. Bougerol ◽  
H. Renevier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gan Nanowires ◽  
In Situ Study ◽  
Self Assembled

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

2001 ◽  
Vol 89 (7) ◽  
pp. 4186-4188 ◽  
Author(s):  
Y. F. Li ◽  
J. Z. Wang ◽  
X. L. Ye ◽  
B. Xu ◽  
F. Q. Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

2011 ◽  
Vol 334 (1) ◽  
pp. 177-180 ◽  
Author(s):  
Rafael Mata ◽  
Karine Hestroffer ◽  
Jorge Budagosky ◽  
Ana Cros ◽  
Catherine Bougerol ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Effect Of Temperature ◽  
Gan Nanowires

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

2011 ◽  
Vol 11 (10) ◽  
pp. 4257-4260 ◽  
Author(s):  
Pinar Dogan ◽  
Oliver Brandt ◽  
Carsten Pfüller ◽  
Jonas Lähnemann ◽  
Uwe Jahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Gan Nanowires

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

2016 ◽  
Vol 119 (22) ◽  
pp. 224305 ◽  
Author(s):  
J. E. Kruse ◽  
L. Lymperakis ◽  
S. Eftychis ◽  
A. Adikimenakis ◽  
G. Doundoulakis ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth
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