scholarly journals Self-assembled nanocolumns in Bi2Se3 grown by molecular beam epitaxy

2021 ◽  
Vol 39 (3) ◽  
pp. 033401
Author(s):  
Theresa P. Ginley ◽  
Stephanie Law
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

2001 ◽  
Vol 89 (7) ◽  
pp. 4186-4188 ◽  
Author(s):  
Y. F. Li ◽  
J. Z. Wang ◽  
X. L. Ye ◽  
B. Xu ◽  
F. Q. Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy

2002 ◽  
Vol 92 (7) ◽  
pp. 4043-4046 ◽  
Author(s):  
T. Mano ◽  
R. Nötzel ◽  
G. J. Hamhuis ◽  
T. J. Eijkemans ◽  
J. H. Wolter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Self Assembled

InAs self‐assembled quantum dots on InP by molecular beam epitaxy

1996 ◽  
Vol 68 (7) ◽  
pp. 991-993 ◽  
Author(s):  
S. Fafard ◽  
Z. Wasilewski ◽  
J. McCaffrey ◽  
S. Raymond ◽  
S. Charbonneau
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy

2000 ◽  
Vol 77 (6) ◽  
pp. 809-811 ◽  
Author(s):  
E. Martinez-Guerrero ◽  
C. Adelmann ◽  
F. Chabuel ◽  
J. Simon ◽  
N. T. Pelekanos ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zinc Blende ◽  
Self Assembled

Fabrication of CdTe Quantum Dot Arrays on GaAs utilizng Nanoporous Alumina Masks

2004 ◽  
Vol 818 ◽  
Author(s):  
Mi Jung ◽  
Hong Seok Lee ◽  
Hong Lee Park ◽  
Sun-Il Mho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Pore Density ◽  
Nanoporous Alumina ◽  
Gaas Substrates ◽  
Cdte Qds ◽  
Self Assembled ◽  
Cdte Quantum Dot

AbstractThe uniformity and reproducibility of the CdTe QD arrays on the GaAs substrates can be improved by using a nanoporous mask. The CdTe QDs on the GaAs substrate were grown by a molecular beam epitaxy (MBE) method. The nanoporous alumina masks used for the fabrication of QD arrays have the thickness from 0.3 νm to 5 νm with the nanochannels of ∼ 80 nm diameter and the pore density of ∼ 1010cm−2. When the thickness of the alumina mask used for the CdTe QD growth was about 300 nm, the CdTe QD arrays formed as a replica of the nanochannels of the mask. Smaller self-assembled CdTe QDs located randomly were produced by using the thicker nanochannel mask than 0.5 νm. The thickness of the nanochannel mask controls the size of the CdTe/GaAs QDs.

Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy

2002 ◽  
Vol 242 (1-2) ◽  
pp. 109-115 ◽  
Author(s):  
Z.Z Sun ◽  
S.F Yoon ◽  
K.C Yew ◽  
W.K Loke ◽  
S.Z Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled
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