Large remanent polarization in multiferroic NdFeO3-PbTiO3 thin film

2013 ◽  
Vol 103 (8) ◽  
pp. 082904 ◽  
Author(s):  
Hanqing Zhao ◽  
Xin Peng ◽  
Linxing Zhang ◽  
Jun Chen ◽  
Wensheng Yan ◽  
...  
2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.


2017 ◽  
Vol 110 (11) ◽  
pp. 112902 ◽  
Author(s):  
Ningtao Liu ◽  
Ruihong Liang ◽  
Zhen Liu ◽  
Zhiyong Zhou ◽  
Chenhong Xu ◽  
...  

2003 ◽  
Vol 82 (26) ◽  
pp. 4761-4763 ◽  
Author(s):  
Hitoshi Morioka ◽  
Gouji Asano ◽  
Takahiro Oikawa ◽  
Hiroshi Funakubo ◽  
Keisuke Saito

2008 ◽  
Vol 354 (45-46) ◽  
pp. 5014-5017
Author(s):  
W.L. Li ◽  
Q.G. Chi ◽  
J.M. Wang ◽  
W.D. Fei

2013 ◽  
Vol 42 (2) ◽  
pp. 585-590 ◽  
Author(s):  
Linxing Zhang ◽  
Jun Chen ◽  
Hanqing Zhao ◽  
Longlong Fan ◽  
Yangchun Rong ◽  
...  

2001 ◽  
Vol 16 (11) ◽  
pp. 3124-3132 ◽  
Author(s):  
Uong Chon ◽  
Hyun M. Jang ◽  
Sun-Hwa Lee ◽  
Gyu-Chul Yi

Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26–28 μC/cm2 and the coercive field of 50–75 kV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.


2002 ◽  
Vol 92 (3) ◽  
pp. 1518-1521 ◽  
Author(s):  
Takayuki Watanabe ◽  
Takashi Kojima ◽  
Tomohiro Sakai ◽  
Hiroshi Funakubo ◽  
Minoru Osada ◽  
...  

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