Large remanent polarization and small leakage in sol–gel derived Bi(Zn1/2Zr1/2)O3–PbTiO3ferroelectric thin films

2013 ◽  
Vol 42 (2) ◽  
pp. 585-590 ◽  
Author(s):  
Linxing Zhang ◽  
Jun Chen ◽  
Hanqing Zhao ◽  
Longlong Fan ◽  
Yangchun Rong ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Large Remanent Polarization

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Property ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Si Substrate ◽  
Degree Of Orientation ◽  
Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Large remanent polarization of 100% polar-axis-oriented epitaxial tetragonal Pb(Zr0.35Ti0.65)O3 thin films

2003 ◽  
Vol 82 (26) ◽  
pp. 4761-4763 ◽  
Author(s):  
Hitoshi Morioka ◽  
Gouji Asano ◽  
Takahiro Oikawa ◽  
Hiroshi Funakubo ◽  
Keisuke Saito
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Polar Axis ◽  
Large Remanent Polarization

The Influences of Annealing Temperatures on the Properties of the Sol-Gel Deposition SrBi4Ti4O15 Thin Films

2011 ◽  
Vol 415-417 ◽  
pp. 1855-1858
Author(s):  
Wen Cheng Tzou ◽  
Chien Chen Diao ◽  
Chao Chin Chan ◽  
Chia Ching Wu ◽  
Chang Fu Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Grain Sizes ◽  
Saturation Polarization ◽  
Frenkel Emission ◽  
Xrd Patterns ◽  
Surface Morphologies

In this study, SrBi4Ti4O15 (SBT) thin films were deposited onto the SiO2/p-Si(100) and Pt/Ti/SiO2/p-Si(100) substrates by using sol-gel method. After deposition, the SBT thin films were then heated by a rapid thermal annealing (RTA) process conducted in air for 1min at 600-800°C. The surface morphologies and the crystalline structures of the SBT thin films were investigated by using SEM and XRD patterns. The grain sizes increased and the pores decreased with rising RTA temperature. In addition, the coercive field decreased and the remanent polarization and saturation polarization increased with rising RTA temperature. The lnJ-E1/2 curves of the SBT thin films were also investigated to find the leakage current mechanisms correspond either to the Schottky emission or to the Poole-Frenkel emission.

Large remanent polarization of Bi4Ti3O12-based thin films modified by the site engineering technique

2002 ◽  
Vol 92 (3) ◽  
pp. 1518-1521 ◽  
Author(s):  
Takayuki Watanabe ◽  
Takashi Kojima ◽  
Tomohiro Sakai ◽  
Hiroshi Funakubo ◽  
Minoru Osada ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Engineering Technique ◽  
Large Remanent Polarization

Preparation and Electrical Properties of Bi0.9Nd0.1Fe0.925Mn0.075O3 Thin Films

2012 ◽  
Vol 557-559 ◽  
pp. 1933-1936
Author(s):  
Ning Yan ◽  
Sheng Hong Yang ◽  
Yue Li Zhang
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Low Leakage ◽  
Bifeo3 Thin Films ◽  
Low Leakage Current

Pure BiFeO3(BFO) and Bi0.9Nd0.1Fe0.925Mn0.075O3(BNFM) thin films were deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel method. X-ray diffraction analysis showed that all the films were single perovskite structure and a phase transition appeared in Nd–Mn codoped BiFeO3 thin films. Electrical measurements indicated that the ferroelectric properties of BFO thin films were significantly improved by Nd and Mn codoping. BNFM films exhibit a low leakage current and a good P-E hysteresis loop. The remanent polarization (Pr) value of 74μC/cm2has been obtained in BNFM films, while the coercive field (Ec) is 184kV/cm.

Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

2005 ◽  
Vol 902 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Switching Field ◽  
Mn Doping ◽  
Mn Doped

AbstractMn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.

Influence of Geometrical Parameters on the Electrical Properties of Ferroelectric Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
S.P. Faure ◽  
P. Gaucher ◽  
J.P. Ganne
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Mean Value ◽  
Ferroelectric Thin Films ◽  
Geometrical Parameters ◽  
Electrical Characteristics ◽  
Electrode Size ◽  
Sol Gel Process

AbstractFerroelectric thin films of PbZr0.5Ti0.5O3 were prepared by sol-gel process. Top electrodes of different sizes were deposited on thin films in order to study their influence on electrical properties. Histograms of the measured electrical characteristics are related to the electrode sizes. By reducing the electrode size, it is possible to improve the electrical properties of the film. Various properties, such as remanent polarization Pr and coercive voltage Vc, were measured statistically in order to show the evolution of their mean value and of their variance with the electrode size.

Effects of Annealing Temperature on Structure and Properties of PLBZT Ferroelectric Thin Films Synthesized by Sol-Gel Processing

2012 ◽  
Vol 602-604 ◽  
pp. 1461-1464
Author(s):  
Hua Wang ◽  
Li Liu ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Ferroelectric Thin Films ◽  
Structure And Properties ◽  
Maximum Value ◽  
Processing Effects ◽  
Gel Processing

[Pb0.95(La0.6Bi0.4)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on ITO-coated glass by sol-gel processing. Effects of annealing temperature on structure and properties of PLBZT have been investigated. With the increase of annealing temperature from 500°C to 550°C, the remanent polarization Pr increase slightly to the maximum value of 25.4μC/cm2 due to the improvement in crystallization of PLBZT films. However, when the annealing temperature is more than 550°C, the pyrochlore phase appear and degrade the Pr of PLBZT thin films. The lowest leakage current density of 1.8×10-9 A/cm2 can be observed in PLBZT thin films when the annealing temperature is 550°C.

Antiferroelectric Thin Films for Decoupling Capacitor and Microactuator Applications

1997 ◽  
Vol 493 ◽  
Author(s):  
Baomin Xu ◽  
Neelesh G. Pai ◽  
Paul Moses ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Strain Level ◽  
Decoupling Capacitor ◽  
Niobium Doped ◽  
Maximum Current

ABSTRACTLanthanum-doped or niobium-doped lead zirconate titanate stannate antiferroelectric thin films with the thickness of about 0.4 μm have been prepared from acetic acid-based or 2-methoxyethanol-based sol-gel method. All the films have the maximum polarization larger than 30 μC/cm2 and show zero remanent polarization. By choosing appropriate compositions, we can make the films have “square” hysteresis loops with very sharp phase transition or “slanted” hysteresis loops with very small hysteresis. The properties that are important for decoupling capacitor and microactuator applications are characterized. For decoupling capacitor applications, films having square hysteresis loops with energy storage density of up to 7 J/cm3 can be made, which release more than half of their stored charge in 10 ns with a maximum current density of more than 9400 A/cm2. For microactuator applications, the films can either have a strain level of 0.32% with very small hysteresis or have a strain level of 0.42% with moderate hysteresis.

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