scholarly journals Interband cascade lasers with room temperature threshold current densities below 100 A/cm2

2013 ◽  
Vol 102 (23) ◽  
pp. 231123 ◽  
Author(s):  
Robert Weih ◽  
Martin Kamp ◽  
Sven Höfling
2012 ◽  
Vol 21 (01) ◽  
pp. 1250014 ◽  
Author(s):  
W. W. BEWLEY ◽  
C. S. KIM ◽  
M. KIM ◽  
I. VURGAFTMAN ◽  
C. L. CANEDY ◽  
...  

We discuss the single-mode performance characteristics of midwave-infrared interband cascade lasers. Broad-area devices with 5 active stages display pulsed threshold current densities as low as 375 A/cm2 and threshold power densities as low as 920 W/cm2 at room temperature, owing in part to the suppression of Auger recombination. Narrow ridges were processed using optical lithography to incorporate a periodically-corrugated pattern into the sidewalls. The corrugations are intended to suppress lasing in higher-order lateral modes, and also provide a 4th-order grating for distributed feedback. A corrugated-sidewall device operating at T = -20° C produced more than 46 mW of cw output in a single spectral mode, with a peak wallplug efficiency of 7.6%. The device maintains single-mode operation at current densities up to 10 times the lasing threshold, and the single-mode tuning range is 26 nm if both current and temperature are varied. Another device operating at -23°C produces up to 31 mW of single-mode power in the 3.3142-3.3164 μm range that spans several of the strongest absorption signature lines for methane.


2012 ◽  
Author(s):  
S. Höfling ◽  
R. Weih ◽  
A. Bauer ◽  
M. Kamp ◽  
A. Forchel

2003 ◽  
Vol 794 ◽  
Author(s):  
V.M. Ustinov ◽  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
N.A. Maleev ◽  
S.S. Mikhrin ◽  
...  

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%)and low internal losses (α=3–4 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.


2012 ◽  
Vol 20 (3) ◽  
pp. 3235 ◽  
Author(s):  
William W. Bewley ◽  
Chadwick L. Canedy ◽  
Chul Soo Kim ◽  
Mijin Kim ◽  
Charles D. Merritt ◽  
...  

2020 ◽  
Vol 116 (13) ◽  
pp. 131101 ◽  
Author(s):  
Hedwig Knötig ◽  
Borislav Hinkov ◽  
Robert Weih ◽  
Sven Höfling ◽  
Johannes Koeth ◽  
...  

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