Calculated room‐temperature threshold current densities for the visible II‐VI ZnCdSe/ZnSe quantum‐well diode lasers

1993 ◽  
Vol 62 (23) ◽  
pp. 2899-2901 ◽  
Author(s):  
R. L. Aggarwal ◽  
J. J. Zayhowski ◽  
B. Lax
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Diode Lasers ◽  
Threshold Current ◽  
Temperature Threshold ◽  
Current Densities

2.3–2.7µm InGaAsSb/AlGaAsSb Broad-Contact and Single-Mode Ridge-Waveguide SCH-QW Diode Lasers Operating in CW Regime at Room Temperature

1999 ◽  
Vol 607 ◽  
Author(s):  
D. Garbuzov ◽  
H. Lee
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Current Density ◽  
Room Temperature ◽  
Diode Lasers ◽  
Single Mode ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Ridge Waveguide ◽  
Longitudinal Modes

AbstractA new approach in the design of (Al)InGaAsSb/GaSb quantum well separate confinement heterostructure (QW-SCH) diode lasers has led to CW room-temperature lasing up to 2.7 gm. To avoid QW material degradation associated with the miscibility gap in the 2.3–2.7 tim wavelength range, we used highly strained, “quasi-ternary” InxGa1−xSbl−yAsy compounds with 0.25<x<0.38 and y<0.07 as the material for QWs. Very low threshold current density (∼300 A/cm2) and high CW output powers (>100 mW) were obtained from broad contact devices operating in the 2.3–2.6 μm wavelength range. From the spontaneous emission measurements we have identified that the Auger process determines the rate of recombination in quantum well active region over the entire temperature range studied (15– 110 'C) for 2.6 gim lasers and only at temperatures higher than 65 'C for 2.3 pim lasers. If Auger recombination dominates, strong temperature dependence of Auger coefficient leads to the rapid increase of threshold current density with temperature (To ∼40 °C). In the range of 15 – 65 °C for 2.3 gim devicesa monomolecular, non-radiative mechanism dominates and To is about 110 °C. In addition, single-mode CW room temperature ridge-waveguide lasers with wavelength of 2.3-2.55 gim have been fabricated for the first time. The lasers display threshold currents around 50 mA with CW output powers of several milliwatts. Since for a certain range of temperatures and currents one of the longitudinal modes dominates in the spectra of the ridge lasers they have been successfully applied forgas spectroscopy.

High-Temperature W Diode Lasers Emitting at 3.3µm

1999 ◽  
Vol 607 ◽  
Author(s):  
L. J. Olafsen ◽  
W. W. Bewley ◽  
I. Vurgaftman ◽  
C. L. Felix ◽  
E. H. Aifer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optical Pumping ◽  
Diode Lasers ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Type Ii ◽  
Operating Characteristics ◽  
Current Densities ◽  
Cladding Layers

AbstractW lasers based on type-II antimonides were recently operated nearly to room temperature under the conditions of cw optical pumping. However, the development of electrically pumped mid-infrared lasers has not yet reached the same level of performance. This is largely related to the more challenging task of simultaneously optimizing the doping/transport and gain/optical properties of the devices. Here we report a demonstration of type-II mid-IR diode lasers employing W active quantum wells. Laser structures with 5 or 10 active periods sandwiched between broadened-waveguide separate confinement regions and quaternary optical cladding layers were processed into 100-µm-wide stripes, cleaved into 1-mm-long cavities, and mounted junction side down. For 0.5-1 µs pulses at a repetition rate of 200 Hz, lasing was obtained up to a maximum operating temperature of 310 K, where the emission wavelength was 3.27 µm. The threshold current densities were 110 A/cm2and 25 kA/cm2 at 78 and 310 K, respectively. The characteristic temperature, To, was 48 K for temperatures between 100 and 280 K. Operation in cw mode was obtained to 195 K, with threshold current densities of 63 A/cm2and 1.4 kA/cm2at 78 and 195 K, respectively, with To = 38 K between 78 and 195 K. Significant further improvements in the operating characteristics are expected once the optimization of the designs and fabrication procedures is complete.

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Theoretical Performance of MID-IR Broken-Gap Superlattice Quantum Well Lasers

1996 ◽  
Vol 450 ◽  
Author(s):  
Michael E. Flatté ◽  
C. H. Grein ◽  
J. T. Olesberg ◽  
T. F. Boggess
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Type Ii Superlattice ◽  
Superlattice Structure ◽  
Current Densities ◽  
Semi Empirical ◽  
Broken Gap ◽  
The Ideal

ABSTRACTWe will present calculations of the ideal performance of mid-infrared InAs/InGaSb superlattice quantum well lasers. For these systems several periods of an InAs/InGaSb type-II superlattice are grown in quantum wells. Calculations of the non-radiative and radiative lifetimes of the carriers utilize the full non-parabolic band structure and momentum-dependent matrix elements calculated from a semi-empirical multilayer K · P theory. From these lifetimes, threshold current densities have been evaluated for laser structures. We find serious problems with the hole and electron confinement in the superlattice quantum wells grown to date, and propose a four-layer superlattice structure which corrects these problems.

1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.

2003 ◽  
Vol 794 ◽  
Author(s):  
V.M. Ustinov ◽  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
N.A. Maleev ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Optical Loss ◽  
Threshold Current ◽  
Temperature Threshold

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%)and low internal losses (α=3–4 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.

Sign in / Sign up

Export Citation Format

Share Document