scholarly journals Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: Spectroscopic experiment versus 10-band k·p modeling

2013 ◽  
Vol 113 (23) ◽  
pp. 233508 ◽  
Author(s):  
K. Ryczko ◽  
G. Sęk ◽  
P. Sitarek ◽  
A. Mika ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Offsets ◽  
Effective Masses ◽  
Experiment Versus

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Band offsets of InXGa1−XN/GaN quantum wells reestimated

2007 ◽  
Vol 515 (10) ◽  
pp. 4488-4491 ◽  
Author(s):  
Dipankar Biswas ◽  
Subindu Kumar ◽  
Tapas Das
Keyword(s):  
Quantum Wells ◽  
Band Offsets

Reconfirmation of the band offsets of InGaP/GaAs quantum wells

2010 ◽  
Vol 42 (8) ◽  
pp. 2131-2133 ◽  
Author(s):  
Sanjib Kabi ◽  
Tapas Das ◽  
Dipankar Biswas
Keyword(s):  
Quantum Wells ◽  
Band Offsets

Dependence of Band Offsets on Elastic Strain in GaAs/GaAs1-xPxStrained-Layer Single Quantum Wells

1991 ◽  
Vol 30 (Part 2, No. 9B) ◽  
pp. L1631-L1634 ◽  
Author(s):  
Xiong Zhang ◽  
Kentaro Onabe ◽  
Yoshiki Nitta ◽  
Baoping Zhang ◽  
Susumu Fukatsu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Elastic Strain ◽  
Single Quantum ◽  
Band Offsets

scholarly journals Band alignment in quantum wells from automatically tuned DFT+U

2019 ◽  
Vol 21 (11) ◽  
pp. 5966-5973 ◽  
Author(s):  
Grigory Kolesov ◽  
Chungwei Lin ◽  
Andrew Knyazev ◽  
Keisuke Kojima ◽  
Joseph Katz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Alignment ◽  
Bulk Properties ◽  
Band Offsets ◽  
Zinc Blende

Accurate band offsets in III–V zinc blende-alloy quantum wells were obtained computationally with the DFT+U method automatically tuned to reproduce bulk properties.

Bilayer oscillation of subband effective masses in Pb/Ge(111) thin-film quantum wells

2010 ◽  
Vol 96 (10) ◽  
pp. 103106 ◽  
Author(s):  
S.-J. Tang ◽  
Chang-Yeh Lee ◽  
Chien-Chung Huang ◽  
Tay-Rong Chang ◽  
Cheng-Maw Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Wells ◽  
Effective Masses

Thermoelectric Properties of PbTe/Pb1−x. Eux Te Quantum Wells

1998 ◽  
Vol 545 ◽  
Author(s):  
H. Scherrer ◽  
Z. Dashevsky ◽  
V. Kantser ◽  
A. Casian ◽  
I. Sur ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Variational Method ◽  
Quantum Wells ◽  
Power Factor ◽  
Thermoelectric Power Factor ◽  
Quantum Well Structures ◽  
Effective Masses ◽  
Dimensional Quantization ◽  
Carrier Scattering ◽  
Bulk Semiconductors

AbstractThe electrical conductivity, Seebeck coefficient, and thermoelectric power factor of PbTe/Pb1−xEuxTe quantum well structures are investigated theoretically. The variational method is employed. The anisotropy of effective masses, the multivalley character of the bulk semiconductors and also the dependence of effective masses in dimensional quantization subbands on the well width are taken into account. The carrier scattering both on optical and acoustical phonons is considered for structures with (111) and (100) crystallographic orientation. It is found that the power factor is larger in (100) oriented quantum wells. The results of recent experiments are discussed.

Band offsets and exciton binding energies inZn1−xCdxSe-ZnSe quantum wells grown by metal-organic vapor-phase epitaxy

1995 ◽  
Vol 51 (7) ◽  
pp. 4699-4702 ◽  
Author(s):  
F. Liaci ◽  
P. Bigenwald ◽  
O. Briot ◽  
B. Gil ◽  
N. Briot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Binding Energies ◽  
Band Offsets ◽  
Organic Vapor ◽  
Metal Organic
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