Bilayer oscillation of subband effective masses in Pb/Ge(111) thin-film quantum wells

2010 ◽  
Vol 96 (10) ◽  
pp. 103106 ◽  
Author(s):  
S.-J. Tang ◽  
Chang-Yeh Lee ◽  
Chien-Chung Huang ◽  
Tay-Rong Chang ◽  
Cheng-Maw Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Wells ◽  
Effective Masses

Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates

2013 ◽  
Vol 378 ◽  
pp. 25-28 ◽  
Author(s):  
T. Nguyen Thanh ◽  
C. Robert ◽  
E. Giudicelli ◽  
A. Létoublon ◽  
C. Cornet ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Wells ◽  
Quantitative Study ◽  
Silicon Substrates ◽  
Si Thin Film

Thermoelectric Properties of PbTe/Pb1−x. Eux Te Quantum Wells

1998 ◽  
Vol 545 ◽  
Author(s):  
H. Scherrer ◽  
Z. Dashevsky ◽  
V. Kantser ◽  
A. Casian ◽  
I. Sur ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Variational Method ◽  
Quantum Wells ◽  
Power Factor ◽  
Thermoelectric Power Factor ◽  
Quantum Well Structures ◽  
Effective Masses ◽  
Dimensional Quantization ◽  
Carrier Scattering ◽  
Bulk Semiconductors

AbstractThe electrical conductivity, Seebeck coefficient, and thermoelectric power factor of PbTe/Pb1−xEuxTe quantum well structures are investigated theoretically. The variational method is employed. The anisotropy of effective masses, the multivalley character of the bulk semiconductors and also the dependence of effective masses in dimensional quantization subbands on the well width are taken into account. The carrier scattering both on optical and acoustical phonons is considered for structures with (111) and (100) crystallographic orientation. It is found that the power factor is larger in (100) oriented quantum wells. The results of recent experiments are discussed.

Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

2015 ◽  
Vol 118 (17) ◽  
pp. 175702 ◽  
Author(s):  
N. Shimosako ◽  
Y. Inose ◽  
H. Satoh ◽  
K. Kinjo ◽  
T. Nakaoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Wells ◽  
Density Dependence ◽  
Carrier Density ◽  
Localized States

Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15477-15483 ◽  
Author(s):  
Wei Guo ◽  
Zhenhai Yang ◽  
Junmei Li ◽  
Xi Yang ◽  
Yun Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Wells ◽  
Light Extraction ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Coupling ◽  
Nanostructure Array ◽  
Uv Leds

The periodicity of a PhC nanostructure array needs to match with the wavelength for improved light extraction enhancement in AlGaN UV-LEDs.

scholarly journals Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: Spectroscopic experiment versus 10-band k·p modeling

2013 ◽  
Vol 113 (23) ◽  
pp. 233508 ◽  
Author(s):  
K. Ryczko ◽  
G. Sęk ◽  
P. Sitarek ◽  
A. Mika ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Offsets ◽  
Effective Masses ◽  
Experiment Versus

Thermoelectric properties of topological insulator Bi2Te3, Sb2Te3, and Bi2Se3 thin film quantum wells

2014 ◽  
Vol 105 (12) ◽  
pp. 123117 ◽  
Author(s):  
Hermann Osterhage ◽  
Johannes Gooth ◽  
Bacel Hamdou ◽  
Paul Gwozdz ◽  
Robert Zierold ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Wells ◽  
Thermoelectric Properties ◽  
Topological Insulator

Cross-plane thermal conductivity temperature dependence for PbSnSe/PbSe thin film superlattice material from 100K to 300K

2013 ◽  
Vol 1456 ◽  
Author(s):  
James D. Jeffers ◽  
Leonard Olona ◽  
Zhihua Cai ◽  
Khosrow Namjou ◽  
Patrick J. McCann
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Lattice Thermal Conductivity ◽  
Continuous Wave ◽  
Emission Spectra ◽  
Multiple Quantum ◽  
Element Analysis ◽  
Plane Lattice

ABSTRACTThe temperature dependence of cross-plane lattice thermal conductivity for thin film IV-VI semiconductors grown by molecular beam epitaxy was measured. Samples consisting of PbSe/PbSrSe multiple quantum wells (MQWs) on PbSe/PbSnSe superlattices (SLs) were grown with variations in SL layer thickness and the number of SL pairs. Localized lattice temperatures within the MQW layers were extracted from analysis of continuous wave photoluminescence (PL) emission spectra at heat sink temperatures between 100 K and 250 K. These data, finite element analysis, and electrical characterization were used to determine cross-plane lattice thermal conductivity of two different SL materials. A SL material with three different PbSe/PbSnSe thicknesses (1.2/1.2, 1.8/1.8, and 2.4/2.4 nm) exhibited a fairly constant lattice thermal conductivity from 1.2 to 1.3 W/mK as the sample was cooled from 250 K to 100 K. Another SL material with five different PbSe/PbSnSe thicknesses (0.5/0.5, 1.0/1.0, 1.6/1.6, 2.1/2.1, and 2.6/2.6 nm) exhibited very low lattice thermal conductivities from 0.46 to 0.47 W/mK 250 K to 100 K. These results are consistent with reflection of low energy heat transporting acoustic phonons within the SL material.

EFFECT OF HYDROSTATIC PRESSURE ON THE BINDING ENERGIES OF EXCITONS IN QUANTUM WELLS

2007 ◽  
Vol 21 (16) ◽  
pp. 2735-2747 ◽  
Author(s):  
G. J. ZHAO ◽  
X. X. LIANG ◽  
S. L. BAN
Keyword(s):  
Dielectric Constant ◽  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Pressure Effect ◽  
Binding Energies ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Effective Masses ◽  
Finite Barrier ◽  
Effect Of Hydrostatic Pressure

The binding energies of excitons in finite barrier quantum wells under hydrostatic pressure are calculated by a variational method. The influences of hydrostatic pressure on the effective masses of the electron and hole, the dielectric constant, and the conduction band offset between the well and barriers are taken into account in the calculation. The numerical results for the GaAs/Al x Ga 1-x As and GaN/Al x Ga 1-x N quantum wells are given respectively. It is shown that the exciton binding energy increases linearly with the pressure and the pressure effect on arsenide quantum wells is more obvious than that on nitride ones. The exciton binding energies monotonically increase with increasing barrier height, which is related to the Al concentration of the barriers and the influence of the pressure.

scholarly journals Effect of Mismatched Electron-Hole Effective Masses on Superfluidity in Double Layer Solid-State Systems

2021 ◽  
Vol 6 (2) ◽  
pp. 14
Author(s):  
Sara Conti ◽  
Andrea Perali ◽  
François M. Peeters ◽  
David Neilson
Keyword(s):  
Quantum Wells ◽  
Double Layer ◽  
Semiconductor Heterostructures ◽  
Double Quantum ◽  
Pairing Interaction ◽  
Electron Hole ◽  
Strongly Coupled ◽  
Mass Imbalance ◽  
Effective Masses ◽  
Self Consistent

Superfluidity has been predicted and now observed in a number of different electron-hole double-layer semiconductor heterostructures. In some of the heterostructures, such as GaAs and Ge-Si electron-hole double quantum wells, there is a strong mismatch between the electron and hole effective masses. We systematically investigate the sensitivity to unequal masses of the superfluid properties and the self-consistent screening of the electron-hole pairing interaction. We find that the superfluid properties are insensitive to mass imbalance in the low density BEC regime of strongly-coupled boson-like electron-hole pairs. At higher densities, in the BEC-BCS crossover regime of fermionic pairs, we find that mass imbalance between electrons and holes weakens the superfluidity and expands the density range for the BEC-BCS crossover regime. This permits screening to kill the superfluid at a lower density than for equal masses.

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