Characterization of polymer:fullerene solar cells by low-frequency noise spectroscopy

2013 ◽  
Vol 102 (22) ◽  
pp. 223902 ◽  
Author(s):  
G. Landi ◽  
C. Barone ◽  
A. De Sio ◽  
S. Pagano ◽  
H. C. Neitzert
Keyword(s):  
Solar Cells ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectroscopy

Low-Frequency Noise Spectroscopy Characterization of HgCdTe Infrared Detectors

2020 ◽  
Vol 67 (2) ◽  
pp. 547-551 ◽  
Author(s):  
Liqi Zhu ◽  
Jian Huang ◽  
Zongheng Xie ◽  
Zhuo Deng ◽  
Lu Chen ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectroscopy

Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy

2011 ◽  
Vol 99 (11) ◽  
pp. 113107 ◽  
Author(s):  
Abhishek Motayed ◽  
Sergiy Krylyuk ◽  
Albert V. Davydov
Keyword(s):  
Silicon Nanowires ◽  
Low Frequency ◽  
Deep Levels ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectroscopy

Investigation of the solvent influence on polymer–fullerene solar cells by low frequency noise spectroscopy

2014 ◽  
Vol 92 (7/8) ◽  
pp. 879-882 ◽  
Author(s):  
G. Landi ◽  
C. Barone ◽  
S. Pagano ◽  
A. De Sio ◽  
H.C. Neitzert
Keyword(s):  
Solar Cells ◽  
Density Of States ◽  
Bulk Heterojunction ◽  
Low Frequency ◽  
Frequency Noise ◽  
Electron Lifetime ◽  
Low Frequency Noise ◽  
Heterojunction Solar Cells ◽  
Noise Spectroscopy ◽  
Carrier Separation

The electron density of states and recombination kinetics of bulk heterojunction solar cells have been determined by means of low-frequency noise spectroscopy at room temperature and in dark conditions. The observed differences in the disorder parameter and electron lifetime are attributed to a different film ordering of the active layer because of the influence of a solvent additive. Blends prepared with the reference solvent resulted in the lowest electron lifetime and density of states population, while blends prepared with the addition of a high boiling point solvent resulted in a more efficient charge carrier separation and a higher electron lifetime.

Study of 14.9 MeV Neutron Irradiation Effects on Ni/GaN Schottky Contacts Using Low‐Frequency Noise Spectroscopy

2019 ◽  
Vol 217 (7) ◽  
pp. 1900701
Author(s):  
Yuan Ren ◽  
Leidang Zhou ◽  
Kang Zhang ◽  
Liang Chen ◽  
Xiaoping Ouyang ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Low Frequency ◽  
Schottky Contacts ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Irradiation Effects ◽  
Noise Spectroscopy

Using low-frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

2004 ◽  
Author(s):  
Jean-Guy Tartarin ◽  
Geoffroy Soubercaze-Pun ◽  
Abdelali Rennane ◽  
Laurent Bary ◽  
Robert Plana ◽  
...  
Keyword(s):  
Technology Assessment ◽  
Low Frequency ◽  
Failure Prediction ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemt ◽  
Noise Characterization
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