Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory

2013 ◽  
Vol 102 (24) ◽  
pp. 241907 ◽  
Author(s):  
Yegang Lu ◽  
Zhonghua Zhang ◽  
Sannian Song ◽  
Xiang Shen ◽  
Guoxiang Wang ◽  
...  
Keyword(s):  
Phase Change ◽  
Performance Improvement ◽  
Phase Change Memory ◽  
Te Material ◽  
Change Memory

Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films

2010 ◽  
Vol 99 (4) ◽  
pp. 767-770 ◽  
Author(s):  
Sannian Song ◽  
Zhitang Song ◽  
Bo Liu ◽  
Liangcai Wu ◽  
Songlin Feng
Keyword(s):  
Phase Change ◽  
Performance Improvement ◽  
Composite Films ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Change Memory

Study on the nitrogen-doped W-Sb-Te material for phase change memory application

2014 ◽  
Vol 104 (17) ◽  
pp. 173102 ◽  
Author(s):  
Kun Ren ◽  
Mengjiao Xia ◽  
Feng Rao ◽  
Zhitang Song ◽  
Keyuan Ding ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Te Material ◽  
Change Memory

Performance Improvement of Phase Change Memory Cell by Using a Tantalum Pentoxide Buffer Layer

2016 ◽  
Vol 848 ◽  
pp. 425-429
Author(s):  
Zhong Hua Zhang ◽  
San Nian Song ◽  
Zhi Tang Song ◽  
Le Li ◽  
Lan Lan Shen ◽  
...  
Keyword(s):  
Phase Change ◽  
Buffer Layer ◽  
Performance Improvement ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Tantalum Pentoxide ◽  
Reset Voltage ◽  
Clad Layer ◽  
Improved Performance ◽  
Change Memory

The performance of phase change memory (PCM) cell, based on Ti0.5Sb2Te3, was significantly improved by using a tantalum dioxide buffer layer. The presence of a buffer layer reduced the reset voltage of the PCM cell. The theoretical thermal simulation and calculation for the reset process were conducted to analyze the thermal effect of the titanium dioxide heating layer. The improved performance of the PCM cell with dioxide clad layer can be attributed to the fact that the buffer layer not only acted as heating layer but also efficiently reduced the cell dissipated power.

Performance improvement of phase-change memory cell with cup-shaped bottom electrode contact

2008 ◽  
Vol 93 (10) ◽  
pp. 103107 ◽  
Author(s):  
L. C. Wu ◽  
Z. T. Song ◽  
F. Rao ◽  
Y. F. Gong ◽  
B. Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
Performance Improvement ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Electrode Contact ◽  
Change Memory

Performance improvement of phase change memory cell by using a cerium dioxide buffer layer

2010 ◽  
Vol 96 (20) ◽  
pp. 203504 ◽  
Author(s):  
Fei Shang ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
Zhitang Song ◽  
Changzhou Wang
Keyword(s):  
Phase Change ◽  
Buffer Layer ◽  
Performance Improvement ◽  
Cerium Dioxide ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Change Memory

Study on WSb 3 Te material for phase-change memory applications

2015 ◽  
Vol 355 ◽  
pp. 667-671 ◽  
Author(s):  
Yun Meng ◽  
Xilin Zhou ◽  
Peigao Han ◽  
Zhitang Song ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Te Material ◽  
Memory Applications ◽  
Change Memory
Sign in / Sign up

Export Citation Format

Share Document