Performance improvement of phase-change memory cell with cup-shaped bottom electrode contact

2008 ◽  
Vol 93 (10) ◽  
pp. 103107 ◽  
Author(s):  
L. C. Wu ◽  
Z. T. Song ◽  
F. Rao ◽  
Y. F. Gong ◽  
B. Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
Performance Improvement ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Electrode Contact ◽  
Change Memory

Design of Side Bottom-Electrode-Contact for High Density Phase-Change Memory Array

2012 ◽  
Vol 12 (10) ◽  
pp. 7939-7943
Author(s):  
Yan Liu ◽  
Zhitang Song ◽  
Bo Liu ◽  
Jia Xu ◽  
Houpeng Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
High Density ◽  
Memory Array ◽  
Electrode Contact ◽  
Change Memory

Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films

2010 ◽  
Vol 99 (4) ◽  
pp. 767-770 ◽  
Author(s):  
Sannian Song ◽  
Zhitang Song ◽  
Bo Liu ◽  
Liangcai Wu ◽  
Songlin Feng
Keyword(s):  
Phase Change ◽  
Performance Improvement ◽  
Composite Films ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Change Memory

Performance Improvement of Phase Change Memory Cell by Using a Tantalum Pentoxide Buffer Layer

2016 ◽  
Vol 848 ◽  
pp. 425-429
Author(s):  
Zhong Hua Zhang ◽  
San Nian Song ◽  
Zhi Tang Song ◽  
Le Li ◽  
Lan Lan Shen ◽  
...  
Keyword(s):  
Phase Change ◽  
Buffer Layer ◽  
Performance Improvement ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Tantalum Pentoxide ◽  
Reset Voltage ◽  
Clad Layer ◽  
Improved Performance ◽  
Change Memory

The performance of phase change memory (PCM) cell, based on Ti0.5Sb2Te3, was significantly improved by using a tantalum dioxide buffer layer. The presence of a buffer layer reduced the reset voltage of the PCM cell. The theoretical thermal simulation and calculation for the reset process were conducted to analyze the thermal effect of the titanium dioxide heating layer. The improved performance of the PCM cell with dioxide clad layer can be attributed to the fact that the buffer layer not only acted as heating layer but also efficiently reduced the cell dissipated power.

Full Integration of Highly Reliable Phase Change Memory With Advanced Ring Type Bottom Electrode Contact

2007 ◽  
Vol 90 (1) ◽  
pp. 88-94 ◽  
Author(s):  
J. M. SHIN ◽  
Y. J. SONG ◽  
D. W. KANG ◽  
C. W. JEONG ◽  
K. C. RYOO ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Ring Type ◽  
Electrode Contact ◽  
Change Memory

scholarly journals Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1268
Author(s):  
Shinyoung Kang ◽  
Juyoung Lee ◽  
Myounggon Kang ◽  
Yunheub Song
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Long Term Potentiation ◽  
Interfacial Phase ◽  
Artificial Synapse ◽  
Electrode Contact ◽  
Contact Size ◽  
Change Memory

In this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb2Te3 alternately to implement an artificial synapse in neuromorphic computing. Furthermore, conventional phase-change random access memory (PCRAM) based on a Ge–Sb–Te (GST) alloy with an identical bottom electrode contact size was fabricated to compare the electrical characteristics. The results showed a reduction in the reset energy consumption of the GeTe/Sb2Te3 (GT/ST) iPCM by more than 69% of the GST alloy for each bottom electrode contact size. Additionally, the GT/ST iPCM achieved gradual conductance tuning and 90.6% symmetry between LTP and LTD with a relatively unsophisticated pulse scheme. Based on the above results, GT/ST iPCM is anticipated to be exploitable as a synaptic device used for brain-inspired computing and to be utilized for next-generation non-volatile memory.

Performance improvement of phase change memory cell by using a cerium dioxide buffer layer

2010 ◽  
Vol 96 (20) ◽  
pp. 203504 ◽  
Author(s):  
Fei Shang ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
Zhitang Song ◽  
Changzhou Wang
Keyword(s):  
Phase Change ◽  
Buffer Layer ◽  
Performance Improvement ◽  
Cerium Dioxide ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Change Memory

A SPICE model for a phase-change memory cell based on the analytical conductivity model

2012 ◽  
Vol 33 (11) ◽  
pp. 114004
Author(s):  
Yiqun Wei ◽  
Xinnan Lin ◽  
Yuchao Jia ◽  
Xiaole Cui ◽  
Jin He ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Conductivity Model ◽  
Spice Model ◽  
Change Memory
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