scholarly journals Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

2013 ◽  
Vol 102 (22) ◽  
pp. 223105 ◽  
Author(s):  
Chloé Rolland ◽  
Philippe Caroff ◽  
Christophe Coinon ◽  
Xavier Wallart ◽  
Renaud Leturcq
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doping ◽  
Inas Nanowires

A New Si Doping Source for GaAs Growth by Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 2, No. 3B) ◽  
pp. L413-L416 ◽  
Author(s):  
Yoshiji Horikoshi ◽  
Mike R. Fahy ◽  
Minoru Kawashima ◽  
Kazuaki Furukawa ◽  
Masaie Fujino ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doping ◽  
New Si

Progress on Preparation of InAs Nanowires by Molecular Beam Epitaxy

2016 ◽  
Vol 852 ◽  
pp. 349-355
Author(s):  
Ru Xue Li ◽  
Ji Long Tang ◽  
Dang Fang ◽  
Shuang Peng Wang ◽  
Hai Feng Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Speed ◽  
Molecular Beam ◽  
Light Emission ◽  
Infrared Light ◽  
Dimensional Structure ◽  
Uniform Structure ◽  
Free Standing ◽  
Inas Nanowires ◽  
Low Dimensional

InAs nanowires (NWs) is a key material for high-speed electronics, near-and mid-infrared light emission and detection applications. Much effort has been devoted to the fabrication of InAs NWs and molecular beam epitaxy (MBE) evolved as a powerful method to grow semiconductor nanowires with several interesting features, but it was rarely reported. We present kinds of growths (metal-catalyzed growth, self-catalyzed growth, self-induced free-standing growth, self-induced position-controlled growth, self-assisted nucleation growth etc.) of InAs NWs by MBE, and discuss how to control growth of uniform-structure InAs NWs on homogeneous or heterogeneous substrates, which can provide the reference for the manufacture of low dimensional structure.

scholarly journals Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

2013 ◽  
Vol 103 (7) ◽  
pp. 073109 ◽  
Author(s):  
Zhi Zhang ◽  
Zhen-Yu Lu ◽  
Ping-Ping Chen ◽  
Hong-Yi Xu ◽  
Ya-Nan Guo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Nanowires

scholarly journals Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

2013 ◽  
Vol 46 (4) ◽  
pp. 893-897 ◽  
Author(s):  
Anton Davydok ◽  
Torsten Rieger ◽  
Andreas Biermanns ◽  
Muhammad Saqib ◽  
Thomas Grap ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Molecular Beam Epitaxy Growth ◽  
Alloy Formation ◽  
X Ray Diffraction ◽  
Out Of Plane ◽  
Inas Nanowires ◽  
Vertically Aligned ◽  
Si Doped

Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO x layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, the formation of a Ga0.2In0.8As alloy was observed if the growth was performed on samples covered by a defective oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Ga concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

2007 ◽  
Vol 102 (9) ◽  
pp. 094313 ◽  
Author(s):  
Maria Tchernycheva ◽  
Laurent Travers ◽  
Gilles Patriarche ◽  
Frank Glas ◽  
Jean-Christophe Harmand ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Theoretical Analysis ◽  
Molecular Beam ◽  
Nanowires Growth ◽  
Inas Nanowires

Effects of doping and planar defects on the thermoelectric properties of InAs nanowires

RSC Advances ◽  
2016 ◽  
Vol 6 (10) ◽  
pp. 7791-7797 ◽  
Author(s):  
Seong Gi Jeon ◽  
Dong Woo Park ◽  
Ho Sun Shin ◽  
Hyun Min Park ◽  
Si Young Choi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermoelectric Properties ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Planar Defects ◽  
Catalyst Free ◽  
Inas Nanowires ◽  
Si Doped

Undoped InAs and Si-doped InAs nanowires with stacking faults and twins were synthesized by catalyst-free molecular beam epitaxy and their thermoelectric enhancements due to planar defects were experimentally and theoretically demonstrated.

Axiotaxy driven growth of belt-shaped InAs nanowires in molecular beam epitaxy

Nano Research ◽  
2021 ◽  
Author(s):  
Qiang Sun ◽  
Dong Pan ◽  
Xutao Zhang ◽  
Jianhua Zhao ◽  
Pingping Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Nanowires

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

2012 ◽  
Vol 101 (3) ◽  
pp. 032109 ◽  
Author(s):  
Faiza Afroz Faria ◽  
Jia Guo ◽  
Pei Zhao ◽  
Guowang Li ◽  
Prem Kumar Kandaswamy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Low Resistance ◽  
Si Doping
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