Effects of doping and planar defects on the thermoelectric properties of InAs nanowires

RSC Advances ◽  
2016 ◽  
Vol 6 (10) ◽  
pp. 7791-7797 ◽  
Author(s):  
Seong Gi Jeon ◽  
Dong Woo Park ◽  
Ho Sun Shin ◽  
Hyun Min Park ◽  
Si Young Choi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermoelectric Properties ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Planar Defects ◽  
Catalyst Free ◽  
Inas Nanowires ◽  
Si Doped

Undoped InAs and Si-doped InAs nanowires with stacking faults and twins were synthesized by catalyst-free molecular beam epitaxy and their thermoelectric enhancements due to planar defects were experimentally and theoretically demonstrated.

scholarly journals Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

2013 ◽  
Vol 46 (4) ◽  
pp. 893-897 ◽  
Author(s):  
Anton Davydok ◽  
Torsten Rieger ◽  
Andreas Biermanns ◽  
Muhammad Saqib ◽  
Thomas Grap ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Molecular Beam Epitaxy Growth ◽  
Alloy Formation ◽  
X Ray Diffraction ◽  
Out Of Plane ◽  
Inas Nanowires ◽  
Vertically Aligned ◽  
Si Doped

Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO x layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, the formation of a Ga0.2In0.8As alloy was observed if the growth was performed on samples covered by a defective oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Ga concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

Influence of Molecular Beam Epitaxy (MBE) Parameters on Catalyst-Free Growth of InAs Nanowires on Silicon (111) Substrate

2019 ◽  
Vol 48 (4) ◽  
pp. 2174-2182
Author(s):  
Suresh K. Jangir ◽  
Hitendra K. Malik ◽  
Anand Kumar ◽  
D. V. Sridhar Rao ◽  
R. Muralidharan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free ◽  
Inas Nanowires ◽  
Free Growth

Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy

2020 ◽  
Vol 116 (5) ◽  
pp. 052101
Author(s):  
Daniel Ruhstorfer ◽  
Simon Mejia ◽  
Manfred Ramsteiner ◽  
Markus Döblinger ◽  
Hubert Riedl ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free ◽  
Gaas Nanowires ◽  
Si Doped

InAs1−xPxnanowires grown by catalyst-free molecular-beam epitaxy

2013 ◽  
Vol 24 (8) ◽  
pp. 085707 ◽  
Author(s):  
I Isakov ◽  
M Panfilova ◽  
M J L Sourribes ◽  
V Tileli ◽  
A E Porter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free

Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy

2006 ◽  
Vol 955 ◽  
Author(s):  
Mo Ahoujja ◽  
S Elhamri ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Unknown Origin ◽  
Shallow Donor ◽  
Related Point ◽  
Line Defects ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTDeep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.

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