Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics

2013 ◽  
Vol 113 (21) ◽  
pp. 214506 ◽  
Author(s):  
Edward Namkyu Cho ◽  
Yong Hyeon Shin ◽  
Ilgu Yun
Keyword(s):  
Metal Oxide ◽  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Effect Transistor

Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

2004 ◽  
Vol 96 (4) ◽  
pp. 2305-2310 ◽  
Author(s):  
M. D. Croitoru ◽  
V. N. Gladilin ◽  
V. M. Fomin ◽  
J. T. Devreese ◽  
W. Magnus ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Effect Transistor

Demonstration and Analysis of Accumulation-Mode Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

2006 ◽  
Vol 45 (4B) ◽  
pp. 3079-3083 ◽  
Author(s):  
Meishoku Masahara ◽  
Kazuhiko Endo ◽  
Yongxun Liu ◽  
Takashi Matsukawa ◽  
Shinichi O'uchi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Accumulation Mode ◽  
Effect Transistor
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