scholarly journals Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

APL Materials ◽  
2013 ◽  
Vol 1 (1) ◽  
pp. 012104 ◽  
Author(s):  
Gang He ◽  
Bin Deng ◽  
Hanshuang Chen ◽  
Xiaoshuang Chen ◽  
Jianguo Lv ◽  
...  
Keyword(s):  
Band Alignment ◽  
Passivation Layer ◽  
Aluminum Oxynitride ◽  
Gate Stacks ◽  
Interface Chemistry

Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven Laminated Interlayers

2020 ◽  
Vol 12 (22) ◽  
pp. 25390-25399
Author(s):  
Die Wang ◽  
Gang He ◽  
Lin Hao ◽  
Lesheng Qiao ◽  
Zebo Fang ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Interface Chemistry ◽  
High K

Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces

2006 ◽  
Vol 911 ◽  
Author(s):  
Karsten Henkel ◽  
Mohamed Torche ◽  
Rakesh Sohal ◽  
Carola Schwiertz ◽  
Patrick Hoffmann ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Layer ◽  
Spectroscopic Characterization ◽  
State Density ◽  
Band Alignment ◽  
Flat Band ◽  
Aluminum Oxynitride ◽  
Electrical Measurements ◽  
Praseodymium Oxide ◽  
High K

AbstractWe combine high-k dielectrics with wide band gap semiconductors for new possibilities for high frequency and high power applications. We investigate the dielectric properties of Praseodymium based oxides and silicates by preparing MIS structures consisting of metal layer (M), PrOx (praseodymium oxide) as a high-k insulating layer (I), and silicon (Si) or silicon carbide (SiC) as semiconductor substrates (S). Our approach consists both, electrical measurements and spectroscopic characterization to analyze properties of the various interfaces within the stacks.For the electrical measurements we produce PrOx layers in the thickness range of 10nm to 240nm. We use capacitance-voltage analysis and determine permittivity values of 8 to 20 depending on physical thickness resulting in an equivalent oxide thickness (EOT) down to 5nm. These data are consistent with the formation of a Pr-silicate between Si and PrOx.In order to prevent interface reactions and to improve the band alignment an interfacial layer is introduced into the stack between the semiconductor and the high-k material. We find aluminum oxynitride (AlON) as a suitable layer which reduces the interface state density to a mean value of 5E11cm2/Vs and the leakage current (1V above flat band) below 1E-5A/cm2.

Interface composition and band alignment issues in high-K gate stacks

2004 ◽  
Author(s):  
S. Sayan ◽  
L. Goncharova ◽  
D. Starodub ◽  
R.A. Bartynski ◽  
X. Zhao ◽  
...  
Keyword(s):  
Band Alignment ◽  
Gate Stacks ◽  
Interface Composition ◽  
High K

scholarly journals Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

2004 ◽  
Vol 96 (12) ◽  
pp. 7485-7491 ◽  
Author(s):  
S. Sayan ◽  
T. Emge ◽  
E. Garfunkel ◽  
Xinyuan Zhao ◽  
L. Wielunski ◽  
...  
Keyword(s):  
Band Alignment ◽  
Gate Stacks
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