scholarly journals Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

2004 ◽  
Vol 96 (12) ◽  
pp. 7485-7491 ◽  
Author(s):  
S. Sayan ◽  
T. Emge ◽  
E. Garfunkel ◽  
Xinyuan Zhao ◽  
L. Wielunski ◽  
...  
Keyword(s):  
Band Alignment ◽  
Gate Stacks

Interface composition and band alignment issues in high-K gate stacks

2004 ◽  
Author(s):  
S. Sayan ◽  
L. Goncharova ◽  
D. Starodub ◽  
R.A. Bartynski ◽  
X. Zhao ◽  
...  
Keyword(s):  
Band Alignment ◽  
Gate Stacks ◽  
Interface Composition ◽  
High K

Hafnia surface and high-k gate stacks

2009 ◽  
Vol 1155 ◽  
Author(s):  
Xuhui Luo ◽  
Alex Demkov ◽  
Onise Sharia ◽  
Gennadi Bersuker
Keyword(s):  
Theoretical Study ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Hafnium Dioxide ◽  
Band Alignment ◽  
Gate Stacks ◽  
High K ◽  
Structural And Electronic Properties ◽  
High Dielectric

AbstractHafnium dioxide that belongs to a class of metal oxides with a high dielectric constant or high-k dielectrics has been recently introduced as a gate dielectric in field effect transistors. We report a theoretical study of structural and electronic properties of hafnia surface, and the electronic structure and band alignment at hafnia interfaces with metals, oxides and semiconductors that are crucial in gate stack engineering.

scholarly journals Deposition and Determination of Band Alignment of Al2O3/Si Gate Stacks by New CVD Chemistry

2014 ◽  
Vol 26 (5) ◽  
pp. 1563-1564
Author(s):  
Gang He ◽  
Jiwen Zhang ◽  
Xuefei Chen ◽  
Bin Deng ◽  
Xueping Song ◽  
...  
Keyword(s):  
Band Alignment ◽  
Gate Stacks
Sign in / Sign up

Export Citation Format

Share Document