Characteristics of Fully Depleted Four-Gate Field Effect Transistor with Localized Interface Charges: A 3-D Simulation Study

M. T. B. Kashem; S. Subrina

doi:10.1166/jno.2015.1735

Characteristics of Fully Depleted Four-Gate Field Effect Transistor with Localized Interface Charges: A 3-D Simulation Study

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1735 ◽

2015 ◽

Vol 10 (3) ◽

pp. 304-308

Author(s):

M. T. B. Kashem ◽

S. Subrina

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Fully Depleted ◽

Interface Charges ◽

Effect Transistor

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Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Journal of Applied Physics ◽

10.1063/1.4805051 ◽

2013 ◽

Vol 113 (19) ◽

pp. 194507 ◽

Cited By ~ 36

Author(s):

Yue Yang ◽

Kain Lu Low ◽

Wei Wang ◽

Pengfei Guo ◽

Lanxiang Wang ◽

...

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Device Physics ◽

Germanium Tin ◽

Effect Transistor

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Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153287 ◽

2020 ◽

Vol 122 ◽

pp. 153287 ◽

Cited By ~ 6

Author(s):

Khalil Tamersit

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study

Results in Physics ◽

10.1016/j.rinp.2019.102823 ◽

2020 ◽

Vol 16 ◽

pp. 102823 ◽

Cited By ~ 2

Author(s):

Mohammad Karbalaei ◽

Daryoosh Dideban ◽

Hadi Heidari

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Electrical Characteristics ◽

High K ◽

Effect Transistor ◽

High K Gate Dielectric

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Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.04fd19 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FD19 ◽

Cited By ~ 1

Author(s):

Keiichi Maekawa ◽

Hideki Makiyama ◽

Yoshiki Yamamoto ◽

Takumi Hasegawa ◽

Shinobu Okanishi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Comprehensive Analysis ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Fully Depleted ◽

Effect Transistor

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Double-Gate Graphene Nanoribbon Field-Effect Transistor for DNA and Gas Sensing Applications: Simulation Study and Sensitivity Analysis

IEEE Sensors Journal ◽

10.1109/jsen.2016.2550492 ◽

2016 ◽

Vol 16 (11) ◽

pp. 4180-4191 ◽

Cited By ~ 52

Author(s):

Khalil Tamersit ◽

Faycal Djeffal

Keyword(s):

Sensitivity Analysis ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Gas Sensing ◽

Graphene Nanoribbon ◽

Double Gate ◽

Sensing Applications ◽

Effect Transistor

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Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications

Sensors ◽

10.3390/s90604366 ◽

2009 ◽

Vol 9 (6) ◽

pp. 4366-4379 ◽

Cited By ~ 14

Author(s):

Gil Shalev ◽

Ariel Cohen ◽

Amihood Doron ◽

Andrew Machauf ◽

Moran Horesh ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Fully Depleted ◽

Effect Transistor ◽

Biosensor Applications

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On the high-field transport and its temperature dependence in deca-nanometer fully depleted silicon-on-insulator field-effect-transistor

Applied Physics Letters ◽

10.1063/1.3626849 ◽

2011 ◽

Vol 99 (9) ◽

pp. 092104

Author(s):

Masaharu Kobayashi ◽

Jin Cai ◽

Wilfried Haensch

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

High Field ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Fully Depleted ◽

Effect Transistor

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Additional-Body Effects in a Self-Aligned Deca-Nanometer Ultrathin-Body and Buried Oxide Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor: A Three-Dimensional Simulation Study

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.110210 ◽

2011 ◽

Vol 50 (11R) ◽

pp. 110210 ◽

Cited By ~ 1

Author(s):

Jyi-Tsong Lin ◽

Yi-Chuen Eng ◽

Cheng-Hsin Chen ◽

Yi-Hsuan Fan

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Dimensional Simulation

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A Three-Dimensional Simulation Study of Source/Drain-Tied Double-Gate Fin Field-Effect Transistor Design for 16-nm Half-Pitch Technology Generation and Beyond

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.084301 ◽

2011 ◽

Vol 50 (8R) ◽

pp. 084301

Author(s):

Yi-Chuen Eng ◽

Jyi-Tsong Lin ◽

Tzu-Feng Chang ◽

Chun-Yu Chen ◽

Yi-Hsuan Fan ◽

...

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Double Gate ◽

Technology Generation ◽

Effect Transistor ◽

Dimensional Simulation

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PH3Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.6943 ◽

2004 ◽

Vol 43 (10) ◽

pp. 6943-6947 ◽

Cited By ~ 2

Author(s):

Ki-Soo Kim ◽

Moon-Seok Yang ◽

Joo-Kyung Song ◽

Sang-Hyun Hong ◽

Ohyun Kim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Rapid Thermal Anneal ◽

Fully Depleted ◽

Effect Transistor

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