Quantification of trap state densities in GaAs heterostructures grown at varying rates using intensity-dependent time resolved photoluminescence

2013 ◽  
Vol 102 (18) ◽  
pp. 182108 ◽  
Author(s):  
C. R. Haughn ◽  
K. J. Schmieder ◽  
J. M. O. Zide ◽  
A. Barnett ◽  
C. Ebert ◽  
...  
Keyword(s):  
Trap State ◽  
Time Resolved ◽  
State Densities ◽  
Time Resolved Photoluminescence

Nonlinear Optical and Transport Properties of Fullerene Crystals

1994 ◽  
Vol 359 ◽  
Author(s):  
Hugh J. Byrne ◽  
Lidia Akselrod ◽  
Andreas T. Werner ◽  
Wolfgang K. Maser ◽  
Mathias Kaiser ◽  
...  
Keyword(s):  
Phase Transition ◽  
Excited State ◽  
Nonlinear Dependence ◽  
High Excited State ◽  
Time Resolved ◽  
Highly Nonlinear ◽  
Observed Behaviour ◽  
State Densities ◽  
Photochemical Modification ◽  
Time Resolved Photoluminescence

ABSTRACTPicosecond time resolved photoluminescence and photoconductivity measurements are performed to investigate the influence of high intensity illumination on the properties of Fullerene crystals. A highly nonlinear dependence of both the photoluminescence characteristics and the photoconductive response of the fullerenes is seen and temperature dependent measurements indicate that the nonlinear processes are associated with an insulatormetal-like phase transition in the material, and thus that the electronic properties of the excited state are dramatically altered at high excited state densities. The observed behaviour is compared and contrasted to the changes in the optical properties upon photochemical modification of the pristine material via Raman spectroscopy. Application of a simple phenomenological model to calculate the contribution of intermolecular exchange and correlation energies in the excited state supports the proposal that the observed phenomena originate from a Mott-like phase transition. A further manifestation of this behaviour is the emergence of a broadband electroluminescent emission above a critical injection current density.

Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.

1997 ◽  
Vol 2 ◽  
Author(s):  
J. Allègre ◽  
P. Lefebvre ◽  
J. Camassel ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Layer Thickness ◽  
Buffer Layers ◽  
Rate Equations ◽  
Time Resolved ◽  
Versus Layer ◽  
Level Model ◽  
Shallow Impurities ◽  
Aln Buffer ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.

ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters

2005 ◽  
Vol 892 ◽  
Author(s):  
Andrei Osinsky ◽  
Jianwei Dong ◽  
J. Q. Xie ◽  
B. Hertog ◽  
A. M. Dabiran ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Compositional Analysis ◽  
Optical Emission ◽  
Rf Plasma ◽  
Light Emitters ◽  
Time Resolved ◽  
Light Emitting ◽  
Spatially Resolved ◽  
Time Resolved Photoluminescence ◽  
Made In

AbstractThis paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.

scholarly journals Highly fluorescent CsPbBr3/TiO2 core/shell perovskite nanocrystals with excellent stability

2021 ◽  
Vol 3 (6) ◽  
Author(s):  
Haitao Chen ◽  
Renhua Li ◽  
Anqi Guo ◽  
Yu Xia
Keyword(s):  
Identical Particle ◽  
Core Shell ◽  
List Type ◽  
Easy Method ◽  
Time Resolved ◽  
Perovskite Nanocrystals ◽  
Promising Application ◽  
The Stability ◽  
Time Resolved Photoluminescence ◽  
Excellent Stability

AbstractThe poor stability of CsPbX3 (X = Cl, Br, I) perovskite nanocrystals is the most impediment to its application in the field of photoelectrics. In this work, monodisperse CsPbBr3/TiO2 nanocrystals are successfully prepared by coating titanium precursor on the surface of colloidal CsPbBr3 nanocrystals at room temperature. The CsPbBr3/TiO2 nanocomposites exhibit excellent stability, remaining the identical particle size (9.2 nm), crystal structures and optical properties. Time-resolved photoluminescence decay shows that the lifetime of CsPbBr3/TiO2 nanocrystals is about 4.04 ns and keeps great stability after lasting two months in the air. Results show that the coating of TiO2 on CsPbBr3 NCs greatly suppressed the anion exchange and photodegradation, which are the main reasons for dramatically improving their chemical stability and photostability. The results provide an effective method to solve the stability problem of perovskite nanostructures and are expected to have a promising application in optoelectronic fieldsArticle highlights 1. Prepared the all-inorganic CsPbBr3/TiO2 core/shell perovskite nanocrystals by an easy method. 2. Explored its essences of PL and lifetime of the synthesized CsPbBr3/TiO2 perovskite nanocrystals. 3. CsPbBr3/TiO2 nanocrystals show the great thermal stability after the post-annealing. 4. The CsPbBr3/TiO2 nanocrystals have a high PLQY and have a promising application in solar cells.

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

scholarly journals Two - Color Mid-Infrared Spectroscopy of Isoelectronic Centers in Silicon

2003 ◽  
Vol 770 ◽  
Author(s):  
N.Q. Vinh ◽  
T. Gregorkiewicz
Keyword(s):  
Excited States ◽  
Free Electron ◽  
Free Electron Laser ◽  
Materials Science ◽  
Time Resolved ◽  
Mid Infrared ◽  
Semiconductor Physics ◽  
Open Questions ◽  
Time Resolved Photoluminescence ◽  
Tunable Source

AbstractOne of the open questions in semiconductor physics is the origin of the small splittings of the excited states of bound excitons in silicon. A free electron laser as a tunable source of the mid-infrared radiation (MIR) can be used to investigate such splittings of the excited states of optical centers created by transition metal dopants in silicon. In the current study, the photoluminescence from silver and copper doped silicon is investigated by two color spectroscopy in the visible and the MIR. It is shown the PL due recombination of exciton bound to Ag and Cu is quenched upon application of the MIR beam. The time-resolved photoluminescence measurements and the quenching effects of these bands are presented. By scanning the wavelength of the free-electron laser ionization spectra of relevant traps involved in photoluminescence are obtained. The formation and dissociation of the bound excitons, and the small splittings of the effective-mass excited states are discussed. The applied experimental method allows correlation of DLTS data on trapping centers to specific channels of radiative recombination. It can be applied for spectroscopic analysis in materials science of semicondutors.

SELF-TRAPPED EXCITONS IN ORTHORHOMBIC SnBr2

2001 ◽  
Vol 15 (28n30) ◽  
pp. 4009-4012 ◽  
Author(s):  
Y. YAMASAKI ◽  
N. OHNO
Keyword(s):  
Time Dependence ◽  
Low Temperatures ◽  
Luminescence Band ◽  
Radiative Decay ◽  
Time Resolved ◽  
Tunneling Recombination ◽  
Exciton Region ◽  
Time Resolved Photoluminescence ◽  
Stokes Shifts ◽  
2.5 Ev Luminescence

Luminescence properties of SnBr 2 have been studied to reveal the photo-excited exciton relaxation process. Two types of luminescence with large Stokes shifts are found at low temperatures; the 2.2-eV luminescence band produced under the photo-excitation in the first exciton region, and the 2.5-eV luminescence band stimulated by photons with energies above the bandgap. The time-resolved photoluminescence measurements have revealed that the 2.2-eV luminescence comprises fast (1.2 μs) and slow (6.4 μs) exponential decay components, whereas the 2.5-eV luminescence shows the time dependence of I(t)∞ t-0.9. These results suggest that the former band is attributed to the radiative decay of self-trapped excitons, and the latter band would originate from tunneling recombination of holes with the STEL as in the case of lead halides.

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