Single-photon detection efficiency up to 50% at 1310 nm with an InGaAs/InP avalanche diode gated at 1.25 GHz

2013 ◽  
Vol 102 (14) ◽  
pp. 141104 ◽  
Author(s):  
Alessandro Restelli ◽  
Joshua C. Bienfang ◽  
Alan L. Migdall
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

A Single-Photon Avalanche Diode in 90-nm CMOS Imaging Technology With 44% Photon Detection Efficiency at 690 nm

2012 ◽  
Vol 33 (5) ◽  
pp. 694-696 ◽  
Author(s):  
Eric A. G. Webster ◽  
Justin A. Richardson ◽  
Lindsay A. Grant ◽  
David Renshaw ◽  
Robert K. Henderson
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Photon Detection ◽  
Imaging Technology ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

scholarly journals Towards THGEM UV-photon detectors for RICH: on single-photon detection efficiency in Ne/CH4and Ne/CF4

2010 ◽  
Vol 5 (01) ◽  
pp. P01002-P01002 ◽  
Author(s):  
C D R Azevedo ◽  
M Cortesi ◽  
A V Lyashenko ◽  
A Breskin ◽  
R Chechik ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Single Photon Detection ◽  
Photon Detectors ◽  
Photon Detection ◽  
Photon Detection Efficiency

A CMOS Single Photon Avalanche Diode Device with High Photon Detection Efficiency

2016 ◽  
Vol 45 (8) ◽  
pp. 823001
Author(s):  
王巍 WANG Wei ◽  
鲍孝圆 BAO Xiao-yuan ◽  
陈丽 CHEN Li ◽  
徐媛媛 XU Yuan-yuan ◽  
陈婷 CHEN Ting ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

The design and characterization of high photon detection efficiency CMOS single-photon avalanche diode

2018 ◽  
Vol 32 (25) ◽  
pp. 1850302
Author(s):  
Wei Wang ◽  
Ting Chen ◽  
Yongchun He ◽  
Mengjia Huang ◽  
Hao Yang ◽  
...  
Keyword(s):  
Low Voltage ◽  
Detection Efficiency ◽  
Single Photon ◽  
Uniform Electric Field ◽  
Cmos Process ◽  
Guard Ring ◽  
Voltage Standard ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

The high photon detection efficiency (PDE) single-photon avalanche diode (SPAD) designed with a low voltage standard 0.18 [Formula: see text]m CMOS process is investigated in detail. The proposed CMOS SPAD is with P+/N-well junction structure, and its multiplication region is surrounded by a virtual guard ring, with which the premature edge avalanche breakdown can be prevented. The analytical and simulation results show that the CMOS SPAD has a uniform electric field distribution in P+/N-well junction, and the breakdown voltage is as low as 8.2 V, the PDE is greater than 40% at the wavelength range of 650–950 nm, at a low excess bias voltage (light intensity is about 0.001 W/cm2), and the peak PDE at 800 nm is about 48%, the relatively low dark count rate (DCR) of 1.4 KHz is obtained.

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