Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control

2013 ◽  
Vol 102 (14) ◽  
pp. 141107 ◽  
Author(s):  
Daniel Zuo ◽  
Pengfei Qiao ◽  
Daniel Wasserman ◽  
Shun Lien Chuang
Keyword(s):  
Direct Observation ◽  
Interfacial Layer ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Layer Control

Minority carrier lifetime and diffusion length in type II superlattice barrier devices

2019 ◽  
Vol 96 ◽  
pp. 155-162 ◽  
Author(s):  
P.C. Klipstein ◽  
Y. Benny ◽  
S. Gliksman ◽  
A. Glozman ◽  
E. Hojman ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
And Diffusion

scholarly journals Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

2011 ◽  
Vol 99 (25) ◽  
pp. 251110 ◽  
Author(s):  
E. H. Steenbergen ◽  
B. C. Connelly ◽  
G. D. Metcalfe ◽  
H. Shen ◽  
M. Wraback ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Long Wavelength ◽  
Type Ii Superlattice ◽  
Long Wavelength Infrared

Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices

2015 ◽  
Vol 107 (20) ◽  
pp. 201107 ◽  
Author(s):  
Zhi-Yuan Lin ◽  
Shi Liu ◽  
Elizabeth H. Steenbergen ◽  
Yong-Hang Zhang
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Carrier Localization ◽  
Type Ii Superlattices

Dependence of minority carrier lifetime of Be-doped InAs/InAsSb type-II infrared superlattices on temperature and doping density

2015 ◽  
Vol 253 (4) ◽  
pp. 630-634 ◽  
Author(s):  
Blair C. Connelly ◽  
Elizabeth H. Steenbergen ◽  
Howard E. Smith ◽  
Said Elhamri ◽  
William C. Mitchel ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Doping Density

TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF TYPE II SUPERLATTICE STRUCTURES WITH VARYING ABSORBER WIDTHS

2011 ◽  
Vol 20 (03) ◽  
pp. 541-548
Author(s):  
BLAIR C. CONNELLY ◽  
GRACE D. METCALFE ◽  
PAUL H. SHEN ◽  
MICHAEL WRABACK
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier Lifetime ◽  
Careful Analysis ◽  
Dominant Factor ◽  
Excitation Density ◽  
Type Ii ◽  
Time Resolved ◽  
Type Ii Superlattice ◽  
Superlattice Structures ◽  
Time Resolved Photoluminescence

We report time-resolved photoluminescence measurements on a set of long-wave infrared InAs / GaSb type II superlattice absorber samples with various widths as a function of temperature and excitation density. Careful analysis of the photoluminescence data determines the minority carrier lifetime and background carrier density as a function of temperature, and provides information on the acceptor energy and density in each sample. Results indicate that carrier lifetime is dominated by Shockley-Read-Hall recombination with a lifetime of ~30 ns at 77 K for all samples. Below 40 K, background carriers are observed to freeze-out in conjunction with increased contributions from radiative recombination. An acceptor energy level of ~20 meV above the valance band is also determined for all samples. Variations of carrier lifetime between each sample do not strongly correlate with absorber width, indicating that barrier recombination is not the dominant factor limiting the carrier lifetime in our samples.

Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors

2009 ◽  
Vol 615-617 ◽  
pp. 299-302
Author(s):  
Corey J. Cochrane ◽  
Patrick M. Lenahan ◽  
Aivars J. Lelis
Keyword(s):  
Magnetic Resonance ◽  
Direct Observation ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Resonance Spectrum ◽  
Minority Carrier Lifetime ◽  
Epitaxial Layers

We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.

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