Direct observation of changes in the effective minority-carrier lifetime of SiN x -passivated n-type crystalline-silicon substrates caused by potential-induced degradation and recovery tests

2017 ◽  
Vol 79 ◽  
pp. 91-95 ◽  
Author(s):  
Naoyuki Nishikawa ◽  
Seira Yamaguchi ◽  
Keisuke Ohdaira
Keyword(s):  
Direct Observation ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Silicon Substrates

Minority carrier lifetime scan map in crystalline silicon wafers

1999 ◽  
Vol 70 (10) ◽  
pp. 4044-4046 ◽  
Author(s):  
J. Gervais ◽  
O. Palais ◽  
L. Clerc ◽  
S. Martinuzzi
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers

Minority Carrier Lifetime Improvement of Multicrystalline Silicon Using Combined Saw Damage Gettering and Emitter Formation

2015 ◽  
Vol 242 ◽  
pp. 126-132 ◽  
Author(s):  
George Martins ◽  
Ruy S. Bonilla ◽  
Toby Burton ◽  
P. MacDonald ◽  
Peter R. Wilshaw
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
High Concentration ◽  
Production Methods ◽  
Cell Efficiency ◽  
Annealing Conditions ◽  
Maximum Lifetime ◽  
Current Production

In this work we use Saw Damage Gettering (SDG) in combination with emitter formation to improve the minority carrier lifetime of highly contaminated multi-crystalline silicon wafers. This process is applied to wafers from the bottom of ingots, commonly referred to as the “red zone”, which are currently discarded since their high concentration of impurities limits the efficiency of solar cells produced therefrom. SDG is a potentially simple technique designed to upgrade these wafers. In this technique, bulk impurities are dissolved via annealing. The wafers are then cooled which generates a super-saturation of impurities in solution. The system then relaxes through the formation of precipitates in the saw damaged region. SDG is shown to be enhanced when using a temperature dependent cooling rate which maximizes the flux of impurities to the saw damaged regions. In addition, these benefits were observed even after an additional gettering process occurring during an emitter formation procedure. The SDG annealing conditions required to achieve the maximum lifetime were altered by the introduction of the emitter formation process. The enhancement generated by the SDG process may be sufficient to enable red-zone wafers to be processed is the same manner as higher quality no-red zone wafer wafers without adversely affecting the resultant cell efficiency. Due to its simplicity, it is expected that SDG can easily be incorporated into current production methods.

Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating

2012 ◽  
Vol 51 ◽  
pp. 03CA04
Author(s):  
Toshiyuki Sameshima ◽  
Koichi Betsuin ◽  
Tomohisa Mizuno ◽  
Naoki Sano
Keyword(s):  
Laser Heating ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime

Impact of Fe and Cu Contamination on the Minority Carrier Lifetime of Silicon Substrates

1996 ◽  
Vol 143 (9) ◽  
pp. 3014-3019 ◽  
Author(s):  
A. L. P. Rotondaro ◽  
T. Q. Hurd ◽  
A. Kaniava ◽  
J. Vanhellemont ◽  
E. Simoen ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Silicon Substrates ◽  
Cu Contamination

scholarly journals Investigation on the Impact of Metallic Surface Contaminations on Minority Carrier Lifetime of a-Si:H Passivated Crystalline Silicon

2011 ◽  
Vol 8 ◽  
pp. 288-293 ◽  
Author(s):  
Florian Sevenig ◽  
Lena Breitenstein ◽  
Antje Oltersdorf ◽  
Karin Zimmermann ◽  
Martin Hermle
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Metallic Surface ◽  
The Impact

Surface Passivation of Crystalline Silicon by a-Si:H Thin Films

2014 ◽  
Vol 936 ◽  
pp. 603-606
Author(s):  
Yin Wang ◽  
Wei Li ◽  
An Ran Guo ◽  
Feng Yu ◽  
Jian He ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Rf Magnetron Sputtering ◽  
Hydrogen Flow Rate ◽  
Hydrogen Flow

Surface passivation of c-Si by a-Si:H thin films has been studied. In this paper, the minority carrier lifetime of 345μs (from 85μs) is obtained at optimal hydrogen flow rate (8.0sccm) by using RF-magnetron sputtering method.

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