Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence

2010 ◽  
Vol 97 (25) ◽  
pp. 251117 ◽  
Author(s):  
Blair C. Connelly ◽  
Grace D. Metcalfe ◽  
Hongen Shen ◽  
Michael Wraback
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Lifetime Measurements ◽  
Time Resolved ◽  
Long Wave ◽  
Type Ii Superlattices ◽  
Long Wave Infrared ◽  
Time Resolved Photoluminescence

scholarly journals Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity

2019 ◽  
Vol 963 ◽  
pp. 313-317
Author(s):  
Jan Beyer ◽  
Nadine Schüler ◽  
Jürgen Erlekampf ◽  
Birgit Kallinger ◽  
Patrick Berwian ◽  
...  
Keyword(s):  
Room Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Temperature Dependent ◽  
Lifetime Measurements ◽  
Time Resolved ◽  
Excess Carrier ◽  
Time Resolved Photoluminescence ◽  
Different Thickness

Temperature dependent microwave detected photoconductivity MDP and time-resolved photoluminescence TRPL were employed to investigate the carrier lifetime in CVD grown 4H-SiC epilayers of different thickness. The minority carrier lifetime may be found from both theMDP and defect PL decay at room temperature for all epilayers, whereas the near bandedge emission (NBE) decay is much faster for thin epilayers (<17 μm) due to the substrate proximity and only follows the minority carrier lifetime for thicker samples at lower excess carrier concentrations.

scholarly journals Injection-dependent Minority Carrier Lifetime in Epitaxial Silicon Layers by Time-resolved Photoluminescence

2015 ◽  
Vol 77 ◽  
pp. 139-148 ◽  
Author(s):  
Stéphanie Parola ◽  
Mehdi Daanoune ◽  
Anne Kaminski-Cachopo ◽  
Guillaume Chareyre ◽  
Mustapha Lemiti ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Epitaxial Silicon ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices

2015 ◽  
Vol 107 (20) ◽  
pp. 201107 ◽  
Author(s):  
Zhi-Yuan Lin ◽  
Shi Liu ◽  
Elizabeth H. Steenbergen ◽  
Yong-Hang Zhang
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Carrier Localization ◽  
Type Ii Superlattices

Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers

2011 ◽  
Vol 679-680 ◽  
pp. 197-200 ◽  
Author(s):  
Tetsuya Miyazawa ◽  
Masahiko Ito ◽  
Hidekazu Tsuchida
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Constant ◽  
Minority Carrier Lifetime ◽  
Bulk Carrier ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
High Injection ◽  
Time Resolved Photoluminescence ◽  
Annealing Method

We investigate the carrier lifetimes in very thick 4H-SiC epilayers (~250 μm) by means of time-resolved photoluminescence and microwave photoconductive decay. Both the minority carrier lifetime and the high injection lifetime are found to reach 18.5 μs by applying the carbon implantation/annealing method to the as-grown epilayers. We also study the epilayer thickness dependence of the carrier lifetime by successive experiments involving lifetime measurement and polishing. Based on the relationships between epilayer thickness and carrier lifetime, the bulk carrier lifetime and the hole diffusion constant are discussed.

TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF TYPE II SUPERLATTICE STRUCTURES WITH VARYING ABSORBER WIDTHS

2011 ◽  
Vol 20 (03) ◽  
pp. 541-548
Author(s):  
BLAIR C. CONNELLY ◽  
GRACE D. METCALFE ◽  
PAUL H. SHEN ◽  
MICHAEL WRABACK
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier Lifetime ◽  
Careful Analysis ◽  
Dominant Factor ◽  
Excitation Density ◽  
Type Ii ◽  
Time Resolved ◽  
Type Ii Superlattice ◽  
Superlattice Structures ◽  
Time Resolved Photoluminescence

We report time-resolved photoluminescence measurements on a set of long-wave infrared InAs / GaSb type II superlattice absorber samples with various widths as a function of temperature and excitation density. Careful analysis of the photoluminescence data determines the minority carrier lifetime and background carrier density as a function of temperature, and provides information on the acceptor energy and density in each sample. Results indicate that carrier lifetime is dominated by Shockley-Read-Hall recombination with a lifetime of ~30 ns at 77 K for all samples. Below 40 K, background carriers are observed to freeze-out in conjunction with increased contributions from radiative recombination. An acceptor energy level of ~20 meV above the valance band is also determined for all samples. Variations of carrier lifetime between each sample do not strongly correlate with absorber width, indicating that barrier recombination is not the dominant factor limiting the carrier lifetime in our samples.

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