Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy

2013 ◽  
Vol 102 (14) ◽  
pp. 141904 ◽  
Author(s):  
Dong-gun Lee ◽  
Ryuta Wakamatsu ◽  
Atsushi Koizumi ◽  
Yoshikazu Terai ◽  
Jonathan D. Poplawsky ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Luminescence Properties ◽  
Organometallic Vapor Phase Epitaxy

In situ Eu doping into Al Ga1−N grown by organometallic vapor phase epitaxy to improve luminescence properties

2015 ◽  
Vol 41 ◽  
pp. 75-79 ◽  
Author(s):  
Atsushi Koizumi ◽  
Kosuke Kawabata ◽  
Dong-gun Lee ◽  
Atsushi Nishikawa ◽  
Yoshikazu Terai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Luminescence Properties ◽  
Organometallic Vapor Phase Epitaxy

Improved Eu Luminescence Properties in Eu-Doped GaN Grown on GaN Substrates by Organometallic Vapor Phase Epitaxy

2010 ◽  
Vol 49 (4) ◽  
pp. 048001 ◽  
Author(s):  
Hitoshi Kasai ◽  
Atsushi Nishikawa ◽  
Takashi Kawasaki ◽  
Naoki Furukawa ◽  
Yoshikazu Terai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Luminescence Properties ◽  
Organometallic Vapor Phase Epitaxy

Luminescence properties of Dy-doped GaAs grown by organometallic vapor phase epitaxy

2001 ◽  
Vol 308-310 ◽  
pp. 796-799 ◽  
Author(s):  
Y. Fujiwara ◽  
T. Koide ◽  
S. Jinno ◽  
Y. Isogai ◽  
Y. Takeda
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Luminescence Properties ◽  
Organometallic Vapor Phase Epitaxy
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