In situ Eu doping into Al Ga1−N grown by organometallic vapor phase epitaxy to improve luminescence properties

2015 ◽  
Vol 41 ◽  
pp. 75-79 ◽  
Author(s):  
Atsushi Koizumi ◽  
Kosuke Kawabata ◽  
Dong-gun Lee ◽  
Atsushi Nishikawa ◽  
Yoshikazu Terai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Luminescence Properties ◽  
Organometallic Vapor Phase Epitaxy

In-situ X-ray studies of organometallic vapor phase epitaxy growth

1995 ◽  
Vol 30 (2-3) ◽  
pp. 99-108 ◽  
Author(s):  
P.H. Fuoss ◽  
D.W. Kisker ◽  
G.B. Stephenson ◽  
S. Brennan
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray

Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy

2013 ◽  
Vol 102 (14) ◽  
pp. 141904 ◽  
Author(s):  
Dong-gun Lee ◽  
Ryuta Wakamatsu ◽  
Atsushi Koizumi ◽  
Yoshikazu Terai ◽  
Jonathan D. Poplawsky ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Luminescence Properties ◽  
Organometallic Vapor Phase Epitaxy

In-Situ Spectroscopic Ellipsometry Applied to ZnSe and ZnCdSe Growth Process in Organometallic Vapor Phase Epitaxy

1992 ◽  
Vol 242 ◽  
Author(s):  
J. Iacoponi ◽  
L. B. Bhat ◽  
B. Johs ◽  
J.A. Woollam
Keyword(s):  
Film Thickness ◽  
Gas Phase ◽  
Vapor Phase ◽  
Spectroscopic Ellipsometry ◽  
Growth Process ◽  
Vapor Phase Epitaxy ◽  
In Situ Monitoring ◽  
Semiconductor Materials ◽  
Organometallic Vapor Phase Epitaxy

ABSTRACTSpectroscopie ellipsometry is a well developed technique for studying the semiconductor materials and heterostructures. Here, we have applied this technique to in-situ studies of ZnSe and ZnCdSe growth in a low pressure organometallic vapor phase epitaxy system. The growth of ZnSe on GaAs was studied using a light source in the range 2 to 4 eV, and film thickness of a few tens of angstroms could be monitored by this technique. The band gap and the composition of Zn1-χCdχSe could also be measured as a function of real time. It was found that, for a gas phase DMCd composition of 60%, the amount of Cd incorporated in the layers is less than 25%. Spectroscopie ellipsometry is demonstrated to be a valuable technique for in-situ monitoring of semiconductor growth in organometallic vapor phase epitaxy systems.

Improved Eu Luminescence Properties in Eu-Doped GaN Grown on GaN Substrates by Organometallic Vapor Phase Epitaxy

2010 ◽  
Vol 49 (4) ◽  
pp. 048001 ◽  
Author(s):  
Hitoshi Kasai ◽  
Atsushi Nishikawa ◽  
Takashi Kawasaki ◽  
Naoki Furukawa ◽  
Yoshikazu Terai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Luminescence Properties ◽  
Organometallic Vapor Phase Epitaxy

Luminescence properties of Dy-doped GaAs grown by organometallic vapor phase epitaxy

2001 ◽  
Vol 308-310 ◽  
pp. 796-799 ◽  
Author(s):  
Y. Fujiwara ◽  
T. Koide ◽  
S. Jinno ◽  
Y. Isogai ◽  
Y. Takeda
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Luminescence Properties ◽  
Organometallic Vapor Phase Epitaxy

Application of x-ray scattering to the in-situ study of organometallic vapor phase epitaxy

1990 ◽  
Author(s):  
David W. Kisker ◽  
Paul H. Fuoss ◽  
Goullioud Renaud ◽  
K. L. Tokuda ◽  
Sean Brennan ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray ◽  
In Situ Study ◽  
X Ray Scattering ◽  
Ray Scattering
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