Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

2010 ◽  
Vol 97 (5) ◽  
pp. 051113 ◽  
Author(s):  
A. Nishikawa ◽  
N. Furukawa ◽  
T. Kawasaki ◽  
Y. Terai ◽  
Y. Fujiwara
Keyword(s):  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Luminescence Properties ◽  
Organometallic Vapor Phase Epitaxy ◽  
Light Emitting

III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

2010 ◽  
Vol 108 (4) ◽  
pp. 044303 ◽  
Author(s):  
Isaac H. Wildeson ◽  
Robert Colby ◽  
David A. Ewoldt ◽  
Zhiwen Liang ◽  
Dmitri N. Zakharov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Light Emitting

Publisher's Note: “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy” [J. Appl. Phys. 108, 044303 (2010)]

2010 ◽  
Vol 108 (7) ◽  
pp. 079907
Author(s):  
Isaac H. Wildeson ◽  
Robert Colby ◽  
David A. Ewoldt ◽  
Zhiwen Liang ◽  
Dmitri N. Zakharov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Light Emitting

Extremely Large Er Excitation Cross Section in Er,O-Codoped GaAs Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
Yasufumi Fujiwara ◽  
Atsushi Koizumi ◽  
Kentaro Inoue ◽  
Akira Urakami ◽  
Taketoshi Yoshikane ◽  
...  
Keyword(s):  
Cross Section ◽  
Vapor Phase ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Excitation Cross Section ◽  
Forward Bias ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Current Densities

ABSTRACTRoom-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). Under forward bias, characteristic emission due to a luminescence center consisting of Er coordinated by O and As was clearly observed at room temperature, while the Er-related EL was undetectable under reverse bias. At lower current densities, the EL intensity increased linearly with the current density. Subsequently, the intensity exhibited a tendency to saturate at higher current densities. By analyzing the behavior with a fitting according to rate equations, the excitation cross section of Er ions due to current injection was determined to be approximately 10-15 cm2, which is by five orders in magnitude larger than that for optical excitation in Er-doped fiber amplifiers (10-20∼10-21 cm2).

Room-Temperature 1.54 µm Light Emission from Er,O-Codoped GaAs/GaInP Light-Emitting Diodes Grown by Low-Pressure Organometallic Vapor Phase Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2223-2225 ◽  
Author(s):  
Atsushi Koizumi ◽  
Yasufumi Fujiwara ◽  
Kentaro Inoue ◽  
Akira Urakami ◽  
Taketoshi Yoshikane ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Light Emitting
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